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RM9926-T

Description
MOSFET SOP-8 MOSFET
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size203KB,8 Pages
ManufacturerRectron
Environmental Compliance
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RM9926-T Overview

MOSFET SOP-8 MOSFET

RM9926-T Parametric

Parameter NameAttribute value
MakerRectron
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxSOP-8
Number of channels2 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage20 V
Id-continuous drain current6 A
Rds On - drain-source on-resistance28 mOhms
Vgs th-gate-source threshold voltage500 mV
Vgs - gate-source voltage10 V
Qg-gate charge10 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation1.25 W
ConfigurationDual
channel modeEnhancement
EncapsulationReel
Transistor type2 N-Channel
Forward transconductance - minimum20 S
Fall time4 ns
Rise Time9 ns
Factory packaging quantity2500
Typical shutdown delay time15 ns
Typical switch-on delay time8 ns
RM9926
N-Channel
Enhancement Mode Power MOSFET
Description
The RM9926 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
Schematic diagram
General Features
V
DS
=20V,I
D
=6A
R
DS(ON)
< 28mΩ @ V
GS
=4.5V
R
DS(ON)
< 37mΩ @ V
GS
=2.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
9926
Device
RM9926
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T
A
=25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100 )
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
D
(100 )
Limit
20
±10
6
3.8
25
1.25
-55 To 150
Unit
V
V
A
A
A
W
I
DM
P
D
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
100
/W
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