STL11N60M2-EP
Datasheet
N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP
Power MOSFET in a PowerFLAT™ 5x6 HV package
Features
Order code
STL11N60M2-EP
1
2
3
4
V
DS
600 V
R
DS(on)
max.
0.654 Ω
I
D
5.5 A
•
•
•
•
•
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
PowerFLAT™ 5x6 HV
D(5, 6, 7, 8)
8
7
6
5
Applications
G(4)
•
Switching applications
1
2
3
4
Description
This device is an N-channel Power MOSFET developed using MDmesh™
M2 enhanced performance (EP) technology. Thanks to its strip layout and an
improved vertical structure, the device exhibits low on-resistance, optimized switching
characteristics with very low turn-off switching losses, rendering it suitable for the
most demanding very high frequency converters.
S(1, 2, 3)
Top View
AM15540v1
Product status
STL11M60M2-EP
Product summary
Order code
Marking
Package
Packing
STL11N60M2-EP
11N60M2E
PowerFLAT™ 5x6 HV
Tape and reel
DS11604
-
Rev 3
-
April 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STL11N60M2-EP
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT
dv/dt
(2)
dv/dt
(3)
T
stg
T
j
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Parameter
Value
± 25
5.5
3.5
22
48
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
1. Pulse width limited by safe operating area.
2. I
SD
≤ 5.5 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V.
3. V
DS
≤ 480 V
Table 2.
Thermal data
Symbol
R
thj-case
R
thj-pcb
(1)
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Value
2.6
59
Unit
°C/W
°C/W
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
Table 3.
Avalanche characteristics
Symbol
I
AR
Parameter
Avalanche current, repetitive or not repetetive
(pulse width limited by T
jmax
)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
Value
2.4
Unit
A
E
AS
115
mJ
DS11604
-
Rev 3
page 2/15
STL11N60M2-EP
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4.
On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 600 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
(1)
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 2.5 A
3.25
4
0.600
Min.
600
1
100
±10
4.75
0.654
Typ.
Max.
Unit
V
µA
µA
µA
V
Ω
I
GSS
V
GS(th)
R
DS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
1. Defined by design, not subject to production test.
Table 5.
Dynamic
Symbol
C
iss
C
oss
C
rss
C
oss eq.
(1)
R
G
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 0 to 480 V, V
GS
= 0 V
f = 1 MHz, I
D
= 0 A
V
DD
= 480 V, I
D
= 7.5 A,
V
GS
= 0 to 10 V
(see
Figure 15. Test circuit for
gate charge behavior)
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
Test conditions
Min.
-
-
-
-
-
-
-
-
Typ.
390
22
0.7
49
9
12.4
2.1
6
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
Ω
nC
nC
nC
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0
to 80% V
DSS
Table 6.
Switching energy
Symbol
Parameter
Test conditions
V
DD
= 400 V, I
D
= 1 A,
E
(off)
Turn-off energy (from 90% V
GS
to 0% I
D
)
R
G
= 4.7 Ω, V
GS
= 10 V
V
DD
= 400 V, I
D
= 3 A,
R
G
= 4.7 Ω, V
GS
= 10 V
Min.
-
Typ.
2.5
Max.
-
Unit
µJ
-
9
-
µJ
DS11604
-
Rev 3
page 3/15
STL11N60M2-EP
Electrical characteristics
Table 7.
Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V
DD
= 300 V, I
D
= 3.75 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 14. Test circuit for
resistive load switching times
and
Figure 19. Switching time
waveform)
Min.
-
-
-
-
Typ.
9
5.5
26
8
Max.
-
-
-
-
Unit
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V, I
SD
= 5.5 A
I
SD
= 7.5 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see
Figure 16. Test circuit for
inductive load switching and
diode recovery times)
I
SD
= 7.5 A, di/dt = 100 A/µs,
V
DD
= 60 V,
T
j
= 150 °C
(see
Figure 16. Test circuit for
inductive load switching and
diode recovery times)
Test conditions
Min.
-
-
-
-
-
-
-
-
-
192
1.32
13.8
262
1.74
13.3
Typ.
Max.
5.5
22
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
1. Pulse width is limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DS11604
-
Rev 3
page 4/15
STL11N60M2-EP
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
GIPG130420161409SOA
I
D
Operation in this area is
(A)
limited by R
DS(on)
Figure 2.
Thermal impedance
K
ZthPowerFlat_5x6_19
d=0.5
0.2
10
1
t
p
=10 µs
t
p
=100 µs
10
-1
0.1
0.05
0.02
0.01
10
0
t
p
=1 ms
T
j
≤150 °C
T
c
= 25°C
single pulse
t
p
=10 ms
10
-2
Single pulse
10
-1
10
-2
10
-1
10
0
10
1
10
2
V
DS
(V)
10
-3 -6
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
(s)
Figure 3.
Output characteristics
I
D
(A)
14
12
10
8
6
4
2
0
0
4
8
12
V
GS
= 5 V
V
GS
= 6 V
GIPG150320161228OCH
Figure 4.
Transfer characteristics
I
D
(A)
14
12
10
8
6
4
2
V
DS
= 17 V
GIPG150320161228TCH
V
GS
= 8, 9, 10 V
V
GS
= 7 V
16
V
DS
(V)
0
3.5
4
4.5
5
5.5
6
6.5
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
V
GS
(V)
12
10
8
6
4
2
0
0
2
4
6
8
10 12 14 16
V
DS
V
DD
= 480 V
I
D
= 7.5 A
GIPG150320161229QVG
V
DS
Figure 6.
Static drain-source on-resistance
R
DS(on)
(Ω)
0.66
0.64
0.62
V
GS
= 10 V
GIPG130420161458RID
(V)
600
500
400
300
200
100
0
Q
g
(nC)
0.60
0.58
0.56
0
1
2
3
4
5
I
D
(A)
DS11604
-
Rev 3
page 5/15
京公网安备 11010802033920号
EEWORLD
