RSF05G1−1P,RSF05G1−3P,RSF05G1−5P
TOSHIBA THYRISITOR SILICON PLANAR TYPE
RSF05G1−1P,RSF05G1−3P,RSF05G1−5P
LOW POWER SWITCHING AND CONTROL APPLICATIONS
Unit: mm
l
Repetitive Peak Off−State Voltage
Repetitive Peak Reverse Voltage
l
Average On−State Current
l
Plastic Mold Type
l
Reduce a Quantity of Parts and Manufacturing
Process Because of Built-in R
GK
: R
GK
=
1kΩ,
2.7kΩ, 5.1kΩ
(Typical)
: V
DRM
= 400V
: V
RRM
= 400V
: I
T (AV)
= 500mA
MAXIMUM RATINGS
CHARACTERISTIC
RSF05G1−1P
Repetitive Peak
Off−State Voltage and
RSF05G1−3P
Repetitive Peak
Reverse Voltage
RSF05G1−5P
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive<
5ms, Tj = 0~125°C)
RSF05G1−1P
RSF05G1−3P
RSF05G1−5P
I
T(AV)
I
T(RMS)
I
TSM
I t
di / dt
P
GM
P
G(AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
SYMBOL
RATING
400
UNIT
V
DRM
V
RRM
400
400
500
V
V
DSM
500
500
500
800
9 (50Hz)
10 (60Hz)
0.4
10
0.1
0.01
3.5
−5
125
−40~125
−40~125
V
Average On−State Current
(Half Sine Waveform)
R.M.S. On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I t Limit Value
Critical Rate of Rise of On−State
Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature
2
mA
mA
A
A s
A / µs
W
W
V
V
mA
°C
°C
2
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO−92
SC−43
13−5A1A
EQUIVALENT CIRCUIT
Note:
di / dt Test Condition, i
G
= 5mA, t
gw
= 10µs, t
gr
≤
250ns
1
2001-07-10
RSF05G1−1P,RSF05G1−3P,RSF05G1−5P
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off-State Current and
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
RSF05G1−1P
Gate Trigger
Current
RSF05G1−3P
RSF05G1−5P
RSF05G1−1P
Holding Current
RSF05G1−3P
RSF05G1−5P
RSF05G1−1P
Resistor Between
Gate and Cathode
RSF05G1−3P
RSF05G1−5P
Critical Rate of
Rise of Off−State
Voltage
Gate Turn−On Time
Thermal
Resistance
Junction to Lead
Junction to Ambient
RSF05G1−1P
RSF05G1−3P
RSF05G1−5P
t
gt
R
th(j
−ℓ)
R
th(j−a)
V
D
= Rated, i
G
= 5mA
DC
dv / dt
V
DRM
= Rated
Exponential Rise
R
GK
―
I
H
I
TM
= 1A, V
D
= 6V
I
GT
SYMBOL
I
DRM
I
RRM
V
TM
V
GT
V
D
= 6V, R
L
= 100Ω
TEST CONDITION
V
DRM
= V
RRM
= Rated
I
TM
= 1A
MIN
―
―
0.4
400
150
80
―
―
―
700
1890
3570
―
―
―
―
―
―
TYP.
―
―
―
700
250
160
―
―
―
1000
2700
5100
200
70
40
―
―
―
MAX
10
1.5
0.8
1000
400
250
6
3
2
1300
3510
6630
―
―
―
1.5
40
180
µs
°C / W
V / µs
Ω
mA
µA
UNIT
µA
V
V
MARKING
Example : It is mark of RSF05G1-1P
2
2001-07-10