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RSF05G1-3P

Description
LOW POWER SWITCHING AND CONTROL APPLICATIONS
CategoryAnalog mixed-signal IC    Trigger device   
File Size307KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RSF05G1-3P Overview

LOW POWER SWITCHING AND CONTROL APPLICATIONS

RSF05G1-3P Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Maximum DC gate trigger current0.4 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current3 mA
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
On-state non-repetitive peak current9 A
Number of components1
Number of terminals3
Maximum on-state current500 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current0.8 A
Maximum repetitive peak off-state leakage current10 µA
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
RSF05G1−1P,RSF05G1−3P,RSF05G1−5P
TOSHIBA THYRISITOR SILICON PLANAR TYPE
RSF05G1−1P,RSF05G1−3P,RSF05G1−5P
LOW POWER SWITCHING AND CONTROL APPLICATIONS
Unit: mm
l
Repetitive Peak Off−State Voltage
Repetitive Peak Reverse Voltage
l
Average On−State Current
l
Plastic Mold Type
l
Reduce a Quantity of Parts and Manufacturing
Process Because of Built-in R
GK
: R
GK
=
1kΩ,
2.7kΩ, 5.1kΩ
(Typical)
: V
DRM
= 400V
: V
RRM
= 400V
: I
T (AV)
= 500mA
MAXIMUM RATINGS
CHARACTERISTIC
RSF05G1−1P
Repetitive Peak
Off−State Voltage and
RSF05G1−3P
Repetitive Peak
Reverse Voltage
RSF05G1−5P
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive<
5ms, Tj = 0~125°C)
RSF05G1−1P
RSF05G1−3P
RSF05G1−5P
I
T(AV)
I
T(RMS)
I
TSM
I t
di / dt
P
GM
P
G(AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
SYMBOL
RATING
400
UNIT
V
DRM
V
RRM
400
400
500
V
V
DSM
500
500
500
800
9 (50Hz)
10 (60Hz)
0.4
10
0.1
0.01
3.5
−5
125
−40~125
−40~125
V
Average On−State Current
(Half Sine Waveform)
R.M.S. On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I t Limit Value
Critical Rate of Rise of On−State
Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature
2
mA
mA
A
A s
A / µs
W
W
V
V
mA
°C
°C
2
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO−92
SC−43
13−5A1A
EQUIVALENT CIRCUIT
Note:
di / dt Test Condition, i
G
= 5mA, t
gw
= 10µs, t
gr
250ns
1
2001-07-10

RSF05G1-3P Related Products

RSF05G1-3P RSF05G1-1P RSF05G1-5P
Description LOW POWER SWITCHING AND CONTROL APPLICATIONS Silicon Controlled Rectifier, 0.8 A, 400 V, SCR, TO-92, PLASTIC, 13-5A1A, SC-43, 3 PIN LOW POWER SWITCHING AND CONTROL APPLICATIONS
Is it lead-free? Contains lead - Contains lead
Is it Rohs certified? incompatible - incompatible
Parts packaging code TO-92 - TO-92
package instruction CYLINDRICAL, O-PBCY-T3 - PLASTIC, 13-5A1A, SC-43, 3 PIN
Contacts 3 - 3
Reach Compliance Code unknow - unknow
Configuration SINGLE - SINGLE WITH BUILT-IN RESISTOR BETWEEN GATE AND CATHODE
Maximum DC gate trigger current 0.4 mA - 0.25 mA
Maximum DC gate trigger voltage 0.8 V - 0.8 V
Maximum holding current 3 mA - 2 mA
JEDEC-95 code TO-92 - TO-92
JESD-30 code O-PBCY-T3 - O-PBCY-T3
Number of components 1 - 1
Number of terminals 3 - 3
Maximum operating temperature 125 °C - 125 °C
Minimum operating temperature -40 °C - -40 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND - ROUND
Package form CYLINDRICAL - CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED - 240
Certification status Not Qualified - Not Qualified
Maximum rms on-state current 0.8 A - 0.8 A
Maximum repetitive peak off-state leakage current 10 µA - 10 µA
Off-state repetitive peak voltage 400 V - 400 V
Repeated peak reverse voltage 400 V - 400 V
surface mount NO - NO
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location BOTTOM - BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
Trigger device type SCR - SCR

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