TTA004B
Bipolar Transistors
Silicon PNP Epitaxial Type
TTA004B
1. Applications
•
Audio-Frequency Amplifiers
2. Features
(1)
(2)
(3)
(4)
High collector voltage: V
CEO
= -160 V (min)
Complementary to TTC004B
Small collector output capacitance: C
ob
= 17 pF (typ.)
High transition frequency: f
T
= 100 MHz (typ.)
3. Packaging and Internal Circuit (Note)
1. Emitter
2. Collector
3. Base
TO-126N
Note:
Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation
voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical
isolation from surrounding parts.
Start of commercial production
©2016 Toshiba Corporation
1
2013-05
2017-01-09
Rev.2.0
TTA004B
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulsed)
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
(T
a
= 25
)
(T
c
= 25
)
(Note 1)
(Note 1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
j
T
stg
Rating
-160
-160
-6
-1.5
-2.5
-0.5
1.5
10
150
-55 to 150
W
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150
.
5. Electrical Characteristics
5.1. Static Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
Test Condition
V
CB
= -160 V, I
E
= 0 A
V
EB
= -6 V, I
C
= 0 A
I
C
= -10 mA, I
B
= 0 A
V
CE
= -5 V, I
C
= -1 mA
V
CE
= -5 V, I
C
= -0.1 A
I
C
= -0.5 A, I
B
= -50 mA
I
C
= -0.5 A, I
B
= -50 mA
Min
-160
80
140
Typ.
Max
-100
-100
280
-0.5
-1.3
V
V
V
Unit
nA
5.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Collector output capacitance
Transition frequency
Symbol
C
ob
f
T
Test Condition
V
CB
= -10 V, I
E
= 0 A, f = 1 MHz
V
CE
= -10 V, I
C
= -100 mA
Min
Typ.
17
100
Max
Unit
pF
MHz
©2016 Toshiba Corporation
2
2017-01-09
Rev.2.0
TTA004B
6. Marking (Note)
Fig. 6.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2016 Toshiba Corporation
3
2017-01-09
Rev.2.0
TTA004B
Fig. 7.7 r
th
- t
w
(Guaranteed Maximum)
Fig. 7.8 Safe Operating Area
(Guaranteed Maximum)
Fig. 7.9 P
C
- T
a
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016 Toshiba Corporation
5
2017-01-09
Rev.2.0
DSP and ARM Processors
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