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S25FL064LABMFA011

Description
NOR flash memory IC 64M FLASH MEMORY
Categorysemiconductor    Memory IC    NOR flash memory   
File Size1MB,153 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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S25FL064LABMFA011 Overview

NOR flash memory IC 64M FLASH MEMORY

S25FL064LABMFA011 Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product CategoryNOR flash memory
Installation styleSMD/SMT
Package/boxSOIC-8
seriesS25FL064L
storage64 Mbit
maximum clock frequency54 MHz, 108 MHz
Interface TypeSPI
organize8 M x 8
Timing typeAsynchronous
Data bus width8 bit
Supply voltage - min.2.7 V
Supply voltage - max.3.6 V
Supply current—max.30 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
EncapsulationTube
speed54 MHz, 108 MHz
Factory packaging quantity182
S25FL064L
64-Mbit (8-Mbyte)
3.0 V FL-L SPI Flash Memory
General Description
The Cypress FL-L Family devices are Flash Nonvolatile Memory products using:
Floating Gate technology
65-nm process lithography
The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output
(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO), and Quad Peripheral
Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address
and read data on both edges of the clock.
The architecture features a Page Programming Buffer that allows up to 256-bytes to be programmed in one operation and provides
individual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase.
By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match
or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.
The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or
embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. These
memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,
executing code directly (XIP), and storing re-programmable data.
Features
Serial Peripheral Interface (SPI) with Multi-I/O
– Clock polarity and phase modes 0 and 3
– Double Data Rate (DDR) option
– Quad peripheral interface (QPI) option
– Extended addressing: 24- or 32-bit address options
– Serial command subset and footprint compatible with S25FL-A,
S25FL1-K, S25FL-P, S25FL-S, and S25FS-S SPI families
– Multi I/O command subset and footprint compatible with S25FL-P,
S25FL-S and S25FS-S SPI families
Read
– Commands: Normal, Fast, Dual I/O, Quad I/O, DualO, QuadO,
DDR Quad I/O
– Modes: Burst wrap, Continuous (XIP), QPI
– Serial flash discoverable parameters (SFDP) for configuration
information
Program Architecture
– 256-Bytes page programming buffer
– Program suspend and resume
Erase Architecture
– Uniform 4 KB sector erase
– Uniform 32 KB half block erase
– Uniform 64 KB block erase
– Chip erase
– Erase suspend and resume
100,000 Program-Erase Cycles, minimum
20 Year Data Retention, minimum
Security Features
– Status and configuration Register protection
– Four security regions of 256-bytes each outside the main Flash
array
– Legacy block protection: Block range
– Individual and region protection
– Individual block lock: Volatile individual sector/block
– Pointer region: Nonvolatile sector/block range
– Power supply Lock-down, password, or permanent protection
of security regions 2 and 3 and pointer region
Technology
– 65-nm Floating Gate technology
Single Supply Voltage with CMOS I/O
– 2.7 V to 3.6 V
Temperature Range / Grade
– Industrial (–40°C to +85°C)
– Industrial Plus (–40°C to +105°C)
– Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
– Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)
– Automotive, AEC-Q100 Grade 1 (–40°C to +125°C)
Packages (All Pb-free)
– 8-lead SOIC 208 mil (SOC008)
– 16-lead SOIC 300 mil (SO3016)
– USON 4
4 mm (UNF008)
– WSON 5 x 6 mm (WND008)
– BGA-24 6
8 mm
– 5
5 ball (FAB024) footprint
– 4
6 ball (FAC024) footprint
– Known good die and known tested die
Cypress Semiconductor Corporation
Document Number: 002-12878 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 11, 2018
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