AT-41533-TR1 datasheet, PDF - EEWORLD Datasheet

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AT-41533-TR1: DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size412KB，10 Pages; ManufacturerHewlett Packard Co.

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AT-41533-TR1 Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN

AT-41533-TR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE, HIGH RELIABILITY
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
highest frequency band	S BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.225 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8000 MHz
Base Number Matches	1

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AT-41533-TR1 Related Products

	AT-41533-TR1	AT-41511-BLK	AT-41533-BLK	AT-41511-TR1
Description	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE, HIGH RELIABILITY	LOW NOISE, HIGH RELIABILITY	LOW NOISE, HIGH RELIABILITY	LOW NOISE, HIGH RELIABILITY
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	12 V	12 V	12 V	12 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30
highest frequency band	S BAND	S BAND	S BAND	S BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G4	R-PDSO-G3	R-PDSO-G4
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	4	3	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.225 W	0.225 W	0.225 W	0.225 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8000 MHz	8000 MHz	8000 MHz	8000 MHz
Base Number Matches	1	1	1	-
Maker	-	Hewlett Packard Co.	Hewlett Packard Co.	Hewlett Packard Co.

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