ACT4529
Rev 4, 06-Jan-2017
40V/3.0A CV/CC Buck Converter Featuring QC2.0, USB Auto-Detect and USB-PD
FEATURES
Quick Charge™
2.0 Certified by Qualcomm
®
and UL.
UL Certificate No. 4787083099-1
http://www.qualcomm.com/documents/quickc
harge-device-list
Pass Apple MFi Test
40V Input Voltage Surge
4.5V-36V Operational Input Voltage
5.1V/9.1V/12.1V Output with +/-1% Accuracy
Up to 3.0A Output current
Constant Current Regulation Limit
QC2.0 Decoding + USB Auto-Detect + USB-PD
Type-C Support
Support Apple 2.4A, Samsung and BC1.2
Hiccup Mode Protection at Output Short
>90% Efficiency at Full Load
0.5mA Low Standby Input Current
5.7V/10.1V/13.5V Output Over-voltage
Protection for 5.1V/9.1V/12.1V Outputs
Cord Voltage Compensation
Meet EN55022 Class B Radiated EMI Standard
8kV ESD HBM Protection on DP and DM
SOP-8EP Package
GENERAL DESCRIPTION
ACT4529 is a wide input voltage, high efficiency
step-down DC/DC converter that operates in either
CV (Constant Output Voltage) mode or CC
(Constant Output Current) mode. This device has
QC2.0 built in to provide 5.1V/9.1V/12.1V outputs
as requested by attached portable devices. Besides
building in QC2.0 decoding, it also supports Apple,
Samsung and BC1.2 devices to charge at full
current rate. ACT4529 has an interface for USB-PD
control via a tri-state digital pin. Vout is 5.1V if this
pin is floating, Vout is 9.1V when this pin voltage is
less than 0.8V and Vout is 12.1V while this pin
voltage is more than 2.0V.
ACT4529 has accurate output current limits under
constant current regulation to meet MFi
specification. It provides up to 3.0A output current
at 125kHz switching frequency. ACT4529 utilizes
adaptive drive technique to achieve good EMI
performance while main >90% efficiency at full load
for mini size CLA designs. It also has output short
circuit protection with hiccup mode. The average
output current is reduced to below 6mA when
output is shorted to ground. Other features include
output over voltage protection and thermal
shutdown.
This device is available in a SOP-8EP package and
require very few external components for operation.
APPLICATIONS
Car Charger
Cigarette Lighter Adaptor (CLA)
Rechargeable Portable Device
CV/CC regulation DC/DC converter
Typical Application Circuit
V/I Profile
4.5V to 40V
IN
C3
22nF
CSN
SW
HSB
Vout
Rcs
20mÙ
ACT4529
CSP
5V/9V/12V
L1
40ìH
Vout
12.1V
9.1V
5.1V
3.2V
3.3A
Iout
C1
47ìF
C2
10ìF
GND PDC
DP
DM
C4
C5
22ìF 220ìF
D1
SK54L
C6
2.2ìF
D-
D+
CC1
CC2
GND
I/O
CC1
CC2
USB-PD Controller
* Patent Pending
Innovative Power
TM
-1-
www.active-semi.com
Copyright
© 2015-2017
Active-Semi, Inc.
ACT4529
Rev 4, 06-Jan-2017
PIN DESCRIPTIONS
PIN
1
2
3
4
5
6
7
8
9
NAME
CSP
CSN
PDC
DP
DM
IN
SW
HSB
GND
DESCRIPTION
Voltage Feedback Input. Connect to node of the inductor and output capacitor. CSP
and CSN Kevin sense is recommended.
Negative input terminal of output current sense. Connect to the negative terminal of
current sense resistor.
USB-PD Control Pin. floating: 5.1V, pulled high: 12.1V, pulled low: 9.1V. Do not drive
this pin higher than 5V.
Data Line Positive Input. Connected to D+ of attached portable device data line. This
pin passes 8kV HBM ESD.
Data Line Negative Input. Connected to D- of attached portable device data line. This
pin passes 8kV HBM ESD.
Power Supply Input. Bypass this pin with a 10ìF ceramic capacitor to GND, placed as
close to the IC as possible.
Power Switching Output to External Inductor.
High Side Bias Pin. This provides power to the internal high-side MOSFET gate driver.
Connect a 22nF capacitor from HSB pin to SW pin.
Ground and Heat Dissipation Pad. Connect this exposed pad to large ground copper
area with copper and vias.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
IN to GND
SW to GND
HSB to GND
CSP, CSN to GND
PDC to GND
All other pins to GND
Junction to Ambient Thermal Resistance
Operating Junction Temperature
Storage Junction Temperature
Lead Temperature (Soldering 10 sec.)
VALUE
-0.3 to 40
-1 to V
IN
+1
V
SW
- 0.3 to V
SW
+ 7
-0.3 to +15
-0.3 to +6
-0.3 to +6
46
UNIT
V
V
V
V
V
V
°C/W
-40 to 150
°C
-55 to 150
°C
300
°C
:
Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
Innovative Power
TM
-3-
www.active-semi.com
Copyright
© 2015-2017
Active-Semi, Inc.
ACT4529
Rev 4, 06-Jan-2017
ELECTRICAL CHARACTERISTICS
(V
IN
= 12V, T
A
= 25°C,
unless otherwise specified.)
Parameter
Input Over Voltage Protection
Input Over Voltage Hysteresis
Input Over Voltage Response Time
Input Under Voltage Lockout (UVLO)
Input UVLO Hysteresis
Input Voltage Power Good Deglitch
Time
Input Voltage Power Good Deglitch
Time
Input Standby Current
Symbol
VIN_OVP
Rising
Condition
Min
40
Typ
42
4
Max
44
Unit
s
V
V
ns
V
mV
ms
us
uA
T_VIN_OVP
VIN
VIN step from 30V to 45V
Rising
250
4.5
200
No OVP
No UVP
Vin=12V, Vout=5.1V, Iload=0
5.05
40
10
500
5.1
9.1
12.1
5.15
9.2
12.25
Output Voltage Regulation
CSP
9.0
11.95
V
5.7
Output Over Voltage Protection
(OVP)
Output rising
10.1
13.5
Falling Threshold
Input Brownout Protection
(ACT4529YH-T1011 only)
VIN Drop
Threshold
Hysteresis
Vout Drop Delay Time
QC and PDC Restart time
Output Over Voltage Deglitch Time
ACT4529YH-
T0001
ACT4529YH-
T0010
Output Voltage Cord Compensation
ACT4529YH-
T0011
ACT4529YH-
T1011
Output Under Voltage Protection
(UVP)
UVP Hysteresis
UVP Deglitch Time
UVP Blanking Time at Startup
Innovative Power
TM
-4-
V
7.7
8.0
200
8.3
V
mV
416
416
1.0
-15%
-15%
100
200
200
200
3.2
0.2
10
3.5
480
480
ms
ms
us
+15%
+15%
+15%
+15%
10%
mV
mV
mV
mV
V
V
us
ms
66mV between CSP and CSN
-15%
-15%
VOUT falling
VOUT rising
-10%
VOUT
VOUT
VOUT
www.active-semi.com
Copyright
© 2015-2017
Active-Semi, Inc.
ACT4529
Rev 4, 06-Jan-2017
ELECTRICAL CHARACTERISTICS
(V
IN
= 12V, T
A
= 25°C,
unless otherwise specified.)
Parameter
Output Constant Current Limit
Hiccup Waiting Time
Top FET Cycle by Cycle Current
Limit
Top FET Rds on
Bot FET Rds on
Maximum Duty Cycle
Switching Frequency
Soft-start Time
Out Voltage Ripples
VOUT Discharge Current
Voltage transition time for QC 2.0
transition or USB PD Type C
Voltage transition time for QC 2.0
transition or USB PD Type C
Symbol
Condition
Rcs=20mÙ
Min
3.1
Typ
3.3
4.13
Max
3.5
Units
A
S
A
mÙ
4.5
5.8
70
4.7
Ù
99
-10%
125
2.0
Cout=220uF/22uF ceramic
For high to lower voltage transi-
tions
12V-5V
80
60
+10%
%
kHz
ms
mV
mA
100
ms
5V-12V
Input 12V-40V-12V with 1V/us
slew rate, Vout=5V, Iload=0A
and 2.4A
Vout=5V
80mA-1.0A-80mA load with
0.1A/us slew rate
80mA-1.0A-80mA load with
0.1A/us slew rate
80mA-1.0A-80mA load with
0.1A/us slew rate
100
ms
Line Transient Response
4.75
5.25
V
4.9
8.7
11.6
5.15
9.1
12.1
160
5.4
9.5
12.6
V
V
V
Load Transient Response
Vout=9V
Vout=12V
Thermal Shut Down
Thermal Shut Down Hysteresis
ESD of DP, DM
PDC Floating
PDC High
PDC Low
PDC Maximum Voltage
PDC Drive Current
Innovative Power
TM
-5-
°C
30
°C
HBM
8
1.5
2.0
0.8
5.5
10
kV
V
V
V
V
uA
www.active-semi.com
Copyright
© 2015-2017
Active-Semi, Inc.
Microcontroller MCU
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