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PEMB14; PUMB14
PNP/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = open
Rev. 02 — 31 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP resistor-equipped transistors
Table 1.
Product overview
Package
NXP
PEMB14
PUMB14
SOT666
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD14
PUMD14
NPN/NPN
complement
PEMH14
PUMH14
Type number
1.2 Features
I
I
I
I
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place cost
1.3 Applications
I
Low current peripheral driver
I
Control of IC inputs
I
Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
Conditions
open base
Min
-
-
33
Typ
-
-
47
Max
−50
−100
61
Unit
V
mA
kΩ
NXP Semiconductors
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
TR1
Simplified outline
6
5
4
Symbol
6
5
4
R1
TR2
1
2
3
001aab555
R1
1
2
3
006aaa268
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMB14
PUMB14
-
SC-88
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMB14
PUMB14
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
5A
T1*
Type number
PEMB14_PUMB14_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
2 of 10
NXP Semiconductors
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
Max
−50
−50
−5
−100
−100
200
200
+150
150
+150
Unit
V
V
V
mA
mA
mW
mW
°C
°C
°C
Per transistor
T
amb
≤
25
°C
[1]
[1] [2]
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
[1]
[1] [2]
-
-
300
300
mW
mW
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
T
amb
≤
25
°C
[1]
[1] [2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
T
amb
≤
25
°C
[1]
[1] [2]
-
-
-
-
416
416
K/W
K/W
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PEMB14_PUMB14_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
3 of 10
NXP Semiconductors
PEMB14; PUMB14
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
Conditions
V
CB
=
−50
V; I
E
= 0 A
V
CE
=
−30
V; I
B
= 0 A
V
CE
=
−30
V; I
B
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−1
mA
I
C
=
−10
mA; I
B
=
−0.5
mA
Min
-
-
-
-
100
-
33
-
Typ
-
-
-
-
-
-
47
-
Max
−100
−1
−50
−100
-
−150
61
2.5
mV
kΩ
pF
Unit
nA
µA
µA
nA
Per transistor
I
EBO
h
FE
V
CEsat
R1
C
c
1000
006aaa206
−1
006aaa207
h
FE
(1)
(2)
(3)
V
CEsat
(V)
100
−10
−1
(1)
(2)
(3)
10
−10
−1
−1
−10
I
C
(mA)
−10
2
−10
−2
−10
−1
−1
−10
I
C
(mA)
−10
2
V
CE
=
−5
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
PEMB14_PUMB14_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
4 of 10
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