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NVT2002GD,125

Description
CONVERSION - VOLTAGE LEVEL BIDIRCTIONL VOLT-LVL TRANSL O-DRN PP APP
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size296KB,26 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

NVT2002GD,125 Overview

CONVERSION - VOLTAGE LEVEL BIDIRCTIONL VOLT-LVL TRANSL O-DRN PP APP

NVT2002GD,125 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
Parts packaging codeSON
package instructionVSON,
Contacts8
Manufacturer packaging codeSOT996-2
Reach Compliance Codecompliant
Other featuresSEATED HGT-NOM
Interface integrated circuit typeINTERFACE CIRCUIT
JESD-30 codeR-PDSO-N8
length3 mm
Humidity sensitivity level1
Number of functions1
Number of terminals8
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeVSON
Package shapeRECTANGULAR
Package formSMALL OUTLINE, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height0.5 mm
Maximum supply voltage5.4 V
Supply voltage 1-max5.5 V
surface mountYES
Temperature levelINDUSTRIAL
Terminal formNO LEAD
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width2 mm
Base Number Matches1
NVT2001; NVT2002
Bidirectional voltage level translator for open-drain and
push-pull applications
Rev. 4 — 27 January 2014
Product data sheet
1. General description
The NVT2001/02 are bidirectional voltage level translators operational from 1.0 V to 3.6 V
(V
ref(A)
) and 1.8 V to 5.5 V (V
ref(B)
), which allow bidirectional voltage translations between
1.0 V and 5 V without the need for a direction pin in open-drain or push-pull applications.
Bit widths ranging from 1-bit or 2-bit are offered for level translation application with
transmission speeds < 33 MHz for an open-drain system with a 50 pF capacitance and a
pull-up of 197
.
When the An or Bn port is LOW, the clamp is in the ON-state and a low resistance
connection exists between the An and Bn ports. The low ON-state resistance (R
on
) of the
switch allows connections to be made with minimal propagation delay. Assuming the
higher voltage is on the Bn port when the Bn port is HIGH, the voltage on the An port is
limited to the voltage set by VREFA. When the An port is HIGH, the Bn port is pulled to the
drain pull-up supply voltage (V
pu(D)
) by the pull-up resistors. This functionality allows a
seamless translation between higher and lower voltages selected by the user without the
need for directional control.
When EN is HIGH, the translator switch is on, and the An I/O are connected to the Bn I/O,
respectively, allowing bidirectional data flow between ports. When EN is LOW, the
translator switch is off, and a high-impedance state exists between ports. The EN input
circuit is designed to be supplied by V
ref(B)
. To ensure the high-impedance state during
power-up or power-down, EN must be LOW.
All channels have the same electrical characteristics and there is minimal deviation from
one output to another in voltage or propagation delay. This is a benefit over discrete
transistor voltage translation solutions, since the fabrication of the switch is symmetrical.
The translator provides excellent ESD protection to lower voltage devices, and at the
same time protects less ESD-resistant devices.
2. Features and benefits
Provides bidirectional voltage translation with no direction pin
Less than 1.5 ns maximum propagation delay
Allows voltage level translation between:
1.0 V V
ref(A)
and 1.8 V, 2.5 V, 3.3 V or 5 V V
ref(B)
1.2 V V
ref(A)
and 1.8 V, 2.5 V, 3.3 V or 5 V V
ref(B)
1.8 V V
ref(A)
and 3.3 V or 5 V V
ref(B)
2.5 V V
ref(A)
and 5 V V
ref(B)
3.3 V V
ref(A)
and 5 V V
ref(B)

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