Rev. 2.5
BSS7728N
SIPMOS
®
Small-Signal-Transistor
Feature
•
N-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
•
Qualified according to AEC Q101
•
Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on)
I
D
60
5
0.2
PG-SOT-23
Drain
pin 3
Gate
pin1
Source
pin 2
V
Ω
A
Type
Package
Pb-free
Yes
Tape and Reel Information
H6327: 3000 pcs/reel
Marking
sSK
BSS7728N PG-SOT-23
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
0.2
0.16
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
0.8
6
±20
0.36
-55... +150
55/150/56
Class 0
Reverse diode dv/dt
I
S
=0.2A,
V
DS
=48V, di/dt=200A/µs,
T
jmax
=150°C
kV/µs
V
W
°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Page 1
2011-07-11
Rev. 2.5
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - ambient
at minimal footprint
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=250µA
BSS7728N
Symbol
min.
R
thJA
-
Values
typ.
-
max.
350
Unit
K/W
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
60
1.3
Values
typ.
-
1.9
max.
-
2.3
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=26µA
Zero gate voltage drain current
V
DS
=60V,
V
GS
=0,
T
j
=25°C
V
DS
=60V,
V
GS
=0,
T
j
=150°C
µA
-
-
1
4.3
2.7
0.1
5
10
7.5
5
nA
Ω
Gate-source leakage current
V
GS
=20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=0.05A
Drain-source on-state resistance
V
GS
=10V,
I
D
=0.5A
Page 2
2011-07-11
Rev. 2.5
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsedI
SM
Inverse diode forward voltage
V
SD
Reverse recovery time
Reverse recovery charge
t
rr
Q
rr
V
GS
=0,
I
F
=I
S
V
R
=30V,
I
F =
l
S
,
di
F
/dt=100A/µs
BSS7728N
Symbol
Conditions
min.
Values
typ.
0.2
37
7.3
2.9
2.7
2.7
6.1
9
max.
-
56
11
4.4
4
4.1
9.1
13
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.16A
V
GS
=0,
V
DS
=25V,
f=1MHz
0.1
-
-
-
-
-
-
-
S
pF
V
DD
=30V,
V
GS
=10V,
I
D
=0.2A,
R
G
=6Ω
ns
Q
gs
Q
gd
Q
g
V
DD
=48V,
I
D
=0.2A
-
-
-
-
0.12
0.43
1
3.8
0.18
0.65
1.5
-
nC
V
DD
=48V,
I
D
=0.2A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=48V,
I
D
= 0.2 A
V
I
S
T
A
=25°C
-
-
-
-
-
-
-
0.84
11.5
2.6
0.2
0.8
1.2
17.5
4
A
V
ns
nC
Page 3
2011-07-11
Rev. 2.5
1 Power dissipation
P
tot
=
f
(T
A
)
0.38
BSS7728N
BSS7728N
2 Drain current
I
D
=
f
(T
A
)
parameter:
V
GS
≥
10 V
0.22
BSS7728N
W
0.32
0.28
A
0.18
0.16
P
tot
I
D
20
40
60
80
100
120
0.24
0.2
0.16
0.14
0.12
0.1
0.08
0.12
0.06
0.08
0.04
0
0
0.04
0.02
°C
160
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
10
1
BSS7728N
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
3
BSS7728N
A
K/W
10
2
10
0
t
= 33.0µs
p
/
I
D
=
V
I
D
DS
Z
thJA
100 µs
10
-1
R
)
(on
DS
1 ms
10
1
10 ms
D = 0.50
10
0
0.20
0.10
10
-2
0.05
DC
10
-1
single pulse
0.02
0.01
10
-3
10
0
10
1
V
10
2
10
-2 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Page 4
t
p
2011-07-11
Rev. 2.5
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j
= 25 °C,
V
GS
0.8
BSS7728N
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j
= 25 °C,
V
GS
10
10V
7V
6V
5V
0.6
4.5V
4.1V
3.7V
0.5
3.5V
3.1V
A
Ω
8
7
6
5
4
3
3.1V
3.5V
3.7V
4.1V
4.5V
5V
6V
7V
10V
0.4
0.3
0.2
2
0.1
1
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
RDS(on)
ID
5
0.1
0.2
0.3
0.4
0.5
0.6
A
0.8
VDS
ID
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
T
j
= 25 °C
0.8
A
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j
= 25 °C
0.4
S
0.32
0.6
0.28
0.5
gfs
V
ID
0.24
0.2
0.16
0.12
0.4
0.3
0.2
0.08
0.1
0.04
0
0
0
0
1
2
3
4
6
0.1
0.2
0.3
0.4
0.5
0.6
A
0.8
VGS
Page 5
ID
2011-07-11
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