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RN1326A

Description
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size208KB,11 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN1326A Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1326A Parametric

Parameter NameAttribute value
Parts packaging codeSC-70
package instruction2-2E1A, USM, SC-70, 3 PIN
Contacts3
Reach Compliance Codeunknow
Other featuresBUILT-IN BIAS RESISTOR RATIO 0.100
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)140
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
RN1321A∼RN1327A
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1321A,RN1322A,RN1323A,RN1324A
RN1325A,RN1326A,RN1327A
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
High current driving is possible.
Since bias resisters are built in the transistor,the miniaturization of the
apparatus by curtailment of the number of parts and laborsaving of an
assembly are possible.
Many kinds of resistance value are lined up in order to support various
kinds of circuit design.
Complementary to RN2321A~RN2327A
Low V
CE(sat)
enable to be low power dissipation on high current driving.
Unit: mm
Equivalent Circuit And Bias Resistance Values
Type No.
RN1321A
RN1322A
RN1323A
RN1324A
RN1325A
RN1326A
RN1327A
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
1. BASE
2. EMITTER
3. COLLECTOR
JEDEC
JEITA
TOSHIBA
SC-70
2-2E1A
Weight: 0.006 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1321A~1327A
RN1321A~1324A
Emitter-base voltage
RN1325A, 1326A
RN1327A
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1321A~1327A
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
15
12
10
5
6
500
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01

RN1326A Related Products

RN1326A RN1321A RN1322A RN1323A RN1324A RN1327A RN1325A
Description Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Parts packaging code SC-70 SC-70 SC-70 SC-70 SC-70 SC-70 SC-70
package instruction 2-2E1A, USM, SC-70, 3 PIN 2-2E1A, USM, SC-70, 3 PIN SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 2-2E1A, USM, SC-70, 3 PIN 2-2E1A, USM, SC-70, 3 PIN 2-2E1A, USM, SC-70, 3 PIN
Contacts 3 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Other features BUILT-IN BIAS RESISTOR RATIO 0.100 BUILT-IN BIAS RESISTOR RATIO 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR RATIO 0.220 BUILT-IN BIAS RESISTOR RATIO 0.047
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 12 V 12 V 12 V 12 V 12 V 12 V 12 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 140 35 65 100 140 140 140
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz
Base Number Matches 1 1 1 1 1 1 -
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