RN1322A datasheet, PDF - EEWORLD Datasheet

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RN1322A: DescriptionSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size208KB，11 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1322A Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1322A Parametric

Parameter Name	Attribute value
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	65
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

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RN1321A∼RN1327A

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1321A,RN1322A,RN1323A,RN1324A

RN1325A,RN1326A,RN1327A

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

High current driving is possible.

Since bias resisters are built in the transistor,the miniaturization of the

apparatus by curtailment of the number of parts and laborsaving of an

assembly are possible.

Many kinds of resistance value are lined up in order to support various

kinds of circuit design.

Complementary to RN2321A~RN2327A

Low V

CE(sat)

enable to be low power dissipation on high current driving.

Unit: mm

Equivalent Circuit And Bias Resistance Values

Type No.

RN1321A

RN1322A

RN1323A

RN1324A

RN1325A

RN1326A

RN1327A

R1 (kΩ)

2.2

4.7

0.47

2.2

R2 (kΩ)

2.2

4.7

1. BASE

2. EMITTER

3. COLLECTOR

JEDEC

JEITA

TOSHIBA

⎯

SC-70

2-2E1A

Weight: 0.006 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN1321A~1327A

RN1321A~1324A

Emitter-base voltage

RN1325A, 1326A

RN1327A

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1321A~1327A

stg

EBO

Symbol

CBO

CEO

Rating

500

100

150

−55~150

°C

Unit

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

RN1322A Related Products

	RN1322A	RN1321A	RN1323A	RN1324A	RN1326A	RN1327A	RN1325A
Description	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Parts packaging code	SC-70	SC-70	SC-70	SC-70	SC-70	SC-70	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3	2-2E1A, USM, SC-70, 3 PIN	SMALL OUTLINE, R-PDSO-G3	2-2E1A, USM, SC-70, 3 PIN	2-2E1A, USM, SC-70, 3 PIN	2-2E1A, USM, SC-70, 3 PIN	2-2E1A, USM, SC-70, 3 PIN
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Other features	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO 1	BUILT-IN BIAS RESISTOR RATIO 0.100	BUILT-IN BIAS RESISTOR RATIO 0.220	BUILT-IN BIAS RESISTOR RATIO 0.047
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	12 V	12 V	12 V	12 V	12 V	12 V	12 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	65	35	100	140	140	140	140
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz
Base Number Matches	1	1	1	1	1	1	-

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