QPD2195
400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor
Doherty
Product Description
The QPD2195 is a discrete GaN on SiC HEMT which
operates from 1.8-2.2 GHz. The device is a single stage
pre-matched power amplifier transistor.
The QPD2195 can be used in Doherty architecture for the
final stage of a base station power amplifier for macrocell
high efficiency systems.
QPD2195 can deliver P
3dB
of 400 W at +48 V operation.
2 Lead NI780 Package
Product Features
1
RoHS compliant.
Functional Block Diagram
•
•
•
•
•
•
Operating Frequency Range: 1.8-2.2 GHz
Operating Drain Voltage: +48 V
Maximum Output Power (P
3dB
): 400 W
(1)
Maximum Drain Efficiency: 75.4%
(1)
Efficiency-Tuned P3dB Gain: 19.1 dB
(1)
2-lead, earless, ceramic flange NI780 package
Note 1: Load pull at 2110 MHz
Applications
•
W-CDMA / LTE
•
Macrocell Base Station, B3-B1
•
Active Antenna
Ordering Information
Part Number
QPD2195S2
QPD2195SQ
QPD2195SR
QPD2195PCB4B01
Description
Box (2 Samples Each)
Tray (25 Samples)
Reel (100 Samples)
1805-2170 MHz Evaluation Board
Data Sheet Rev. B | Subject to change without notice.
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QPD2195
400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor
Doherty
Recommended Operating
Absolute Maximum Ratings
Conditions
Parameter
Value / Range
Parameter
Min Typ Max Units
Gate Current (I
G
)
Drain Voltage (V
D
)
Peak RF Input Power
VSWR Mismatch, P1dB Pulse (10 %
duty cycle, 100 µ width), T = 25 °C
Storage Temperature
−67 to 67 mA
+55 V
44 dBm
10:1
−65 to +150°C
Gate Voltage (V
G
)
Drain Voltage (V
D
)
Quiescent Current (I
DQ
)
−2.8
48
720
V
V
mA
Electrical performance is measured under conditions noted in
the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
Operation of this device outside the parameter ranges given above
may cause permanent damage.
RF Characterization
Parameter
Frequency Range
Quiescent Current
Linear Gain
P3dB
Drain Efficiency
Conditions
Min
1805
Typ
720
20.4
56.3
70.1
Max
2170
Units
MHz
mA
dB
dBm
%
P3dB
Test conditions unless otherwise noted: V
D
= +48 V, I
DQ
= 720 mA, T = 25°C, Pulsed CW (10% duty cycle, 100 µs width) on Class AB
single-ended EVB at 1880 MHz
Thermal and Reliability Information
Parameter
Thermal Resistance, Peak IR Surface
Temperature at Average Power (θ
JC
)
Test Conditions
T
CASE
= 85°C, T
CH
= 110°C,
CW: P
DISS
= 60 W, P
OUT
= 90 W
Value
0.42
Units
°C/W
Notes:
1. Thermal resistance measured to package backside.
2. Based on expected carrier amplifier efficiency of Doherty.
3. P
OUT
assumes 20% peaking amplifier contribution of total average Doherty rated power.
4. Refer to the following document:
GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Data Sheet Rev. B | Subject to change without notice.
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QPD2195
400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor
Doherty
QPD2195PCB4B01 Layout
QPD2195PCB4B01 Bill of Materials
Reference Des.
C1, C3, C6, C8
C2
C10
C14, C15
C13
C11, C12
C4, C7
C5
C9
R1
Value Description
33 pF
0.6 pF
0.2 pF
0.4 pF
0.3 pF
1.0 µF
4.7 µF
100 µF
220 µF
10 Ω
Capacitor, 33 pF, 5%, 250V
Capacitor, 0.6 pF, +/- 0.1pF, 250V
Capacitor, 0.2 pF, +/- 0.1pF, 250V
Capacitor, 0.4 pF, +/- 0.1pF, 250V
Capacitor, 0.3 pF, +/- 0.1pF, 250V
Capacitor, 1 µF, 10%, 100V, X7R
Capacitor, 4.7 µF, 10%, 100V, X7R
Capacitor, 100uF, 50V, +/-20%, SMD
Capacitor, 220uF, 100V, +/-20%, SMD
Resistor, 10 Ω, 5%, 0.25W, 1206
Manuf. Part Number
ATC
ATC
ATC
ATC
ATC
MURATA
MURATA
Panasonic
Panasonic
Panasonic
ATC800A330JT250X
ATC800A0R6BT250X
ATC800A0R2BT250X
ATC800A0R4BT250X
ATC800A0R3BT250X
GRM32NR72A104KA01L
GRM55ER72A475KA01L
EEE-1HA101UAP
AFK227M2AR44T-F
ERJ-8ENF10R0V
Data Sheet Rev. B | Subject to change without notice.
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QPD2195
400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor
Doherty
QPD2195PCB4B01 Performance Plots
24
23
22
20
21
Gain vs. Output Power
V
D
= +48 V, I
DQ
= 720 mA
Pulsed CW: 10% Duty Cycle, 100 µs Width
Temp. = +25°C
80
70
Drain Efficiency vs. Output Power
V
D
= +48 V, I
DQ
= 720 mA
Pulsed CW: 10% Duty Cycle, 100 µs Width
Drain Efficiency (%)
60
50
40
1800 MHz
1840 MHz
2110 MHz
2170 MHz
Gain (dB)
19
18
17
16
15
14
13
12
1800 MHz
2110 MHz
1840 MHz
2140 MHz
1880 MHz
2170 MHz
30
20
10
1880 MHz
2140 MHz
Temp. = +25°C
0
42
44
46
48
50
52
54
56
58
42
44
46
48
50
52
54
56
58
Output Power (dBm)
Output Power (dBm)
24
23
22
20
21
Gain vs. Average Output Power
V
D
= +48 V, I
DQ
= 720 mA
LTE 20MHz, PAR = 7.8 dB @ 0.01% CCDF
Temp. = +25°C
60
50
Drain Efficiency vs. Average Output Power
V
D
= +48 V, I
DQ
= 720 mA
LTE 20MHz, PAR = 7.8 dB @ 0.01% CCDF
Drain Efficiency (%)
40
1800 MHz
1840 MHz
2110 MHz
2170 MHz
Gain (dB)
19
18
17
16
15
14
13
12
1800 MHz
2110 MHz
30
20
10
1880 MHz
2140 MHz
1840 MHz
2140 MHz
1880 MHz
2170 MHz
Temp. = +25°C
0
30
32
34
36
38
40
42
44
46
48
50
52
54
30
32
34
36
38
40
42
44
46
48
50
52
54
Average Output Power (dBm)
Average Output Power (dBm)
60
Peak Power vs. Average Output Power
V
D
= +48 V, I
DQ
= 720 mA
LTE 20MHz, PAR = 7.8 dB @ 0.01% CCDF
Temp. = +25°C
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
ACPR vs. Average Output Power
V
D
= +48 V, I
DQ
= 720 mA
LTE 20MHz, PAR = 7.8 dB @ 0.01% CCDF
Temp. = +25°C
Peak Power at 0.01% CCDF (dBm)
58
56
54
50
48
46
44
42
1800 MHz
1840 MHz
2140 MHz
1880 MHz
2170 MHz
ACPR (dBc)
52
40
38
1800 MHz
2110 MHz
1840 MHz
2140 MHz
1880 MHz
2170 MHz
2110 MHz
30
32
34
36
38
40
42
44
46
48
50
52
54
30
32
34
36
38
40
42
44
46
48
50
52
54
Average Output Power (dBm)
Average Output Power (dBm)
Test conditions unless otherwise noted: V
D
= +48 V, I
DQ
= 720 mA, T = 25°C, on Class AB single-ended EVB
Data Sheet Rev. B | Subject to change without notice.
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QPD2195
400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor
Doherty
QPD2195PCB4B01 Performance Plots
25
20
Small Signal Gain vs. Frequency
Temp. = +25°C
0
-5
Return Loss vs. Frequency
15
-10
S
11
, S
22
(dB)
10
S
21
(dB)
-15
-20
-25
-30
-35
IRL
ORL
5
0
-5
-10
-15
-20
Temp. = +25°C
-40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Frequency (GHz)
Test conditions unless otherwise noted: V
D
= +48 V, I
DQ
= 720 mA, T = 25°C, on Class AB single-ended EVB
Data Sheet Rev. B | Subject to change without notice.
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