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B0540W RHG

Description
Schottky Diodes & Rectifiers 40 Volt 0.5 Amp 5.5 Amp IFSM
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    Schottky diode rectifier   
File Size254KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

B0540W RHG Overview

Schottky Diodes & Rectifiers 40 Volt 0.5 Amp 5.5 Amp IFSM

B0540W RHG Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategorySchottky diodes and rectifiers
productSchottky Diodes
Installation styleSMD/SMT
Package/boxSOD-123-2
If - forward current500 mA
Vrrm - Repetitive reverse voltage40 V
Vf - forward voltage0.51 V
Ifsm - Forward surge current5.5 A
ConfigurationSingle
technologySi
Ir - 反向电流 20 uA
Minimum operating temperature- 55 C
Maximum operating temperature+ 125 C
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Pd-power dissipation410 mW
Factory packaging quantity3000
Vr - 反向电压 40 V
unit weight10 mg
B0520LW,B0530W,B0540W
Taiwan Semiconductor
Small Signal Product
Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) under plate
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 0.01 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current @ T
L
=100°C (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
Notes: 2. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Reverse Breakdown Voltage
(Minimum Value)
I
R
=250μA
I
R
=130μA
I
R
=20μA
I
F
=100mA
I
F
=500mA
I
F
=1000mA
V
R
= 10V
Reverse Leakage Current
(Maximum Value)
V
R
= 15V
V
R
= 20V
V
R
= 30V
V
R
= 40V
Junction Capacitance
V
R
= 0 V
f=1.0MHz
C
J
T
J
= 25°C
I
R
T
J
= 25°C
V
F
V
(BR)
SYMBOL
B0520LW
20
-
-
0.300
0.385
-
75
-
250
-
-
B0530W
-
30
-
0.375
0.430
-
-
20
-
130
-
170
B0540W
-
-
40
-
0.510
0.620
-
-
10
-
20
pF
μA
V
V
UNIT
(Note 2)
SYMBOL
P
D
V
RRM
V
R
I
O
I
FSM
R
θJA
T
J
, T
STG
20
14
B0520LW
B0530W
410
30
21
500
5.5
244
-55 to +125
40
28
B0540W
UNIT
mW
V
V
mA
A
°C/W
°C
Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load
Forward Voltage
(Maximum Value)
Version: I1601

B0540W RHG Related Products

B0540W RHG B0530W RHG
Description Schottky Diodes & Rectifiers 40 Volt 0.5 Amp 5.5 Amp IFSM Schottky Diodes & Rectifiers 30 Volt 0.5 Amp 5.5 Amp IFSM
Maker Taiwan Semiconductor Taiwan Semiconductor
Product Category Schottky diodes and rectifiers Schottky diodes and rectifiers
product Schottky Diodes Schottky Diodes
Installation style SMD/SMT SMD/SMT
Package/box SOD-123-2 SOD-123-2
If - forward current 500 mA 500 mA
Vrrm - Repetitive reverse voltage 40 V 30 V
Vf - forward voltage 0.51 V 0.43 V
Ifsm - Forward surge current 5.5 A 5.5 A
Configuration Single Single
technology Si Si
Ir - 反向电流 20 uA 130 uA
Minimum operating temperature - 55 C - 55 C
Maximum operating temperature + 125 C + 125 C
Pd-power dissipation 410 mW 410 mW
Factory packaging quantity 3000 3000
Vr - 反向电压 40 V 30 V
unit weight 10 mg 10 mg
Encapsulation Reel Reel
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