1N5400 datasheet, PDF - EEWORLD Datasheet

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1N5400: Description3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD; Categorysemiconductor Discrete semiconductor; File Size75KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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1N5400 Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5400 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	PLASTIC PACKAGE-2
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	MATTE Tin
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	50 V
Maximum average forward current	3 A
Maximum non-repetitive peak forward current	200 A

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MCC

Features

•

omponents

21201 Itasca Street Chatsworth

!"#

$ % !"#

1N5400

THRU

1N5408

3 Amp Rectifier

50 - 1000 Volts

Low Current Leakage

Metalurgically Bonded Construction

Low Forward Voltage

High Current Capability

•

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 30

°C/W

Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

500V

600V

800V

1000V

Maximum

RMS

Voltage

Maximum

DC

Blocking

Voltage

50V

100V

200V

400V

500V

600V

800V

1000V

DO-201AD

D

1N5400

1N5401

1N5402

1N5404

1N5405

1N5406

1N5407

1N5408

---

35V

70V

140V

280V

350V

420V

560V

700V

A

Cathode

Mark

B

D

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I

F(AV)

3.0A

T

A

= 105°C

Current

Peak Forward Surge

I

FSM

200A

8.3ms, half sine

Current

Maximum

1.0V

I

FM

= 3.0A;

Instantaneous

V

F

Forward Voltage

T

J

= 25°C*

Maximum DC

Reverse Current At

I

R

5.0µA

T

J

= 25°C

Rated DC Blocking

50µA

T

J

= 125°C

Voltage

Typical Junction

C

J

40pF

Measured at

Capacitance

1.0MHz, V

R

=4.0V

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

C

DIMENSIONS

INCHES

MIN

---

.048

1.000

MM

MIN

---

1.20

25.40

DIM

A

B

C

D

MAX

.370

.250

.052

---

MAX

9.50

6.40

1.30

---

NOTE

www.mccsemi.com

1N5400 Related Products

	1N5400	1N5401	1N5402	1N5404	1N5405	1N5406	1N5407	1N5408
Description	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 600 V, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals	2	2	2	2	-	2	-	-
Number of components	1	1	1	1	-	1	-	-
Processing package description	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	GREEN, PLASTIC PACKAGE-2	-	LEAD FREE, PLASTIC, CASE 267-05, 2 PIN	-	-
state	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	-	DISCONTINUED	-	CONSULT MFR
packaging shape	round	round	round	round	-	round	-	-
Package Size	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-	LONG FORM	-	-
Terminal form	Wire	Wire	Wire	Wire	-	Wire	-	-
terminal coating	MATTE Tin	tin	tin lead	PURE Tin	-	MATTE Tin	-	-
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	-	AXIAL	-	-
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy	-	-
structure	single	single	single	single	-	single	-	-
Shell connection	isolation	isolation	isolation	isolation	-	isolation	-	-
Diode component materials	silicon	silicon	silicon	silicon	-	silicon	-	-
Diode type	rectifier diode	rectifier diode	rectifier diode	rectifier diode	-	rectifier diode	-	rectifier diode
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	EFFICIENCY	-	GENERAL PURPOSE	-	-
Phase	1	1	1	1	-	1	-	-
Maximum repetitive peak reverse voltage	50 V	100 V	200 V	400 V	-	600 V	-	-
Maximum average forward current	3 A	3 A	3 A	3 A	-	3 A	-	-
Maximum non-repetitive peak forward current	200 A	200 A	200 A	200 A	-	200 A	-	-

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