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1N5406

Description
3 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size75KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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1N5406 Overview

3 A, 600 V, SILICON, RECTIFIER DIODE

1N5406 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionLEAD FREE, PLASTIC, CASE 267-05, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingMATTE Tin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage600 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A
MCC
Features
  omponents
21201 Itasca Street Chatsworth

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1N5400
THRU
1N5408
3 Amp Rectifier
50 - 1000 Volts
Low Current Leakage
Metalurgically Bonded Construction
Low Forward Voltage
High Current Capability
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 30
°C/W
Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
500V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
500V
600V
800V
1000V
DO-201AD
D
1N5400
1N5401
1N5402
1N5404
1N5405
1N5406
1N5407
1N5408
---
---
---
---
---
---
---
---
35V
70V
140V
280V
350V
420V
560V
700V
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
3.0A
T
A
= 105°C
Current
Peak Forward Surge
I
FSM
200A
8.3ms, half sine
Current
Maximum
1.0V
I
FM
= 3.0A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0µA
T
J
= 25°C
Rated DC Blocking
50µA
T
J
= 125°C
Voltage
Typical Junction
C
J
40pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
C
DIMENSIONS
INCHES
MIN
---
---
.048
1.000
MM
MIN
---
---
1.20
25.40
DIM
A
B
C
D
MAX
.370
.250
.052
---
MAX
9.50
6.40
1.30
---
NOTE
www.mccsemi.com

1N5406 Related Products

1N5406 1N5400 1N5401 1N5402 1N5404 1N5405 1N5407 1N5408
Description 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals 2 2 2 2 2 - - -
Number of components 1 1 1 1 1 - - -
Processing package description LEAD FREE, PLASTIC, CASE 267-05, 2 PIN PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 - - -
state DISCONTINUED ACTIVE ACTIVE DISCONTINUED ACTIVE - - CONSULT MFR
packaging shape round round round round round - - -
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM - - -
Terminal form Wire Wire Wire Wire Wire - - -
terminal coating MATTE Tin MATTE Tin tin tin lead PURE Tin - - -
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL - - -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - - -
structure single single single single single - - -
Shell connection isolation isolation isolation isolation isolation - - -
Diode component materials silicon silicon silicon silicon silicon - - -
Diode type rectifier diode rectifier diode rectifier diode rectifier diode rectifier diode - - rectifier diode
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE EFFICIENCY - - -
Phase 1 1 1 1 1 - - -
Maximum repetitive peak reverse voltage 600 V 50 V 100 V 200 V 400 V - - -
Maximum average forward current 3 A 3 A 3 A 3 A 3 A - - -
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A - - -

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