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1N5401

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size99KB,2 Pages
ManufacturerBytes
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1N5401 Overview

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5401 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage100 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A
1N5400
3.0 AMP SILICON RECTIFIERS
THRU
1N5408
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
3.0 Amperes
DO-27
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 1.10 grams
.375(9.5)
.285(7.2)
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
θ
JA (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1N5400 1N5401
1N5402 1N5404
1N5406 1N5407 1N5408
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
3.0
200
1.0
5.0
50
40
30
-65
+150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
µA
pF
C/W
C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
122

1N5401 Related Products

1N5401 1N5400 1N5404 1N5406 1N5407 1N5408
Description 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals 2 2 2 2 - -
Number of components 1 1 1 1 - -
Processing package description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 LEAD FREE, PLASTIC, CASE 267-05, 2 PIN - -
state ACTIVE ACTIVE ACTIVE DISCONTINUED - CONSULT MFR
packaging shape round round round round - -
Package Size LONG FORM LONG FORM LONG FORM LONG FORM - -
Terminal form Wire Wire Wire Wire - -
terminal coating tin MATTE Tin PURE Tin MATTE Tin - -
Terminal location AXIAL AXIAL AXIAL AXIAL - -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - -
structure single single single single - -
Shell connection isolation isolation isolation isolation - -
Diode component materials silicon silicon silicon silicon - -
Diode type rectifier diode rectifier diode rectifier diode rectifier diode - rectifier diode
application GENERAL PURPOSE GENERAL PURPOSE EFFICIENCY GENERAL PURPOSE - -
Phase 1 1 1 1 - -
Maximum repetitive peak reverse voltage 100 V 50 V 400 V 600 V - -
Maximum average forward current 3 A 3 A 3 A 3 A - -
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A - -
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