1N5407 datasheet, PDF - EEWORLD Datasheet

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1N5407: Description3 A, SILICON, RECTIFIER DIODE, DO-201AD; Categorysemiconductor Discrete semiconductor; File Size99KB，2 Pages; ManufacturerBytes

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1N5407 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

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1N5400

3.0 AMP SILICON RECTIFIERS

THRU

1N5408

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

3.0 Amperes

DO-27

.220(5.6)

.197(5.0)

DIA.

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

* Weight: 1.10 grams

.375(9.5)

.285(7.2)

.052(1.3)

.048(1.2)

DIA.

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=75 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 3.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance R

JA (Note 2)

Operating and Storage Temperature Range T

, T

STG

NOTES:

1N5400 1N5401

1N5402 1N5404

1N5406 1N5407 1N5408

UNITS

100

200

140

200

400

280

400

3.0

200

1.0

5.0

-65

+150

600

420

600

800

560

800

1000

700

1000

µA

C/W

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.

122

1N5407 Related Products

	1N5407	1N5401	1N5400	1N5404	1N5406	1N5408
Description	3 A, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 600 V, SILICON, RECTIFIER DIODE	RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals	-	2	2	2	2	-
Number of components	-	1	1	1	1	-
Processing package description	-	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	GREEN, PLASTIC PACKAGE-2	LEAD FREE, PLASTIC, CASE 267-05, 2 PIN	-
state	-	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	CONSULT MFR
packaging shape	-	round	round	round	round	-
Package Size	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-
Terminal form	-	Wire	Wire	Wire	Wire	-
terminal coating	-	tin	MATTE Tin	PURE Tin	MATTE Tin	-
Terminal location	-	AXIAL	AXIAL	AXIAL	AXIAL	-
Packaging Materials	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-
structure	-	single	single	single	single	-
Shell connection	-	isolation	isolation	isolation	isolation	-
Diode component materials	-	silicon	silicon	silicon	silicon	-
Diode type	-	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode
application	-	GENERAL PURPOSE	GENERAL PURPOSE	EFFICIENCY	GENERAL PURPOSE	-
Phase	-	1	1	1	1	-
Maximum repetitive peak reverse voltage	-	100 V	50 V	400 V	600 V	-
Maximum average forward current	-	3 A	3 A	3 A	3 A	-
Maximum non-repetitive peak forward current	-	200 A	200 A	200 A	200 A	-

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