DMTH4008LFDFWQ
40V +175° N-CHANNEL ENHANCEMENT MODE MOSFET
C
Product Summary
BV
DSS
R
DS(ON)
Max
11.5mΩ @ V
GS
= 10V
18mΩ @ V
GS
= 4.5V
I
D
Max
T
A
= +25°
C
11.6A
9.3A
Features
Rated to +175° – Ideal for High Ambient Temperature
C
Environments
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low R
DS(ON)
– Ensures On State Losses Are Minimized
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm
2
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
40V
ADVANCED INFORMATION
Description
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Power Management Functions
DC-DC Converters
Backlighting
Mechanical Data
Case: U-DFN2020-6 (SWP) (Type F)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (SWP) (Type F)
D
G
Pin Out
Bottom View
S
Internal Schematic
Top View
Bottom View
Ordering Information
(Note 5)
Part Number
DMTH4008LFDFWQ-7
DMTH4008LFDFWQ-13
Notes:
Case
U-DFN2020-6 (SWP) (Type F)
U-DFN2020-6 (SWP) (Type F)
Quantity Per Reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
8W
Date Code Key
Year
Code
Month
Code
2017
E
Jan
1
Feb
2
2018
F
Mar
3
2019
G
Apr
4
May
5
YM
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
Nov
N
2024
L
Dec
D
DMTH4008LFDFWQ
D
atasheet number: DS39771 Rev. 3 - 2
1 of 7
www.diodes.com
January 2018
© Diodes Incorporated
DMTH4008LFDFWQ
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= 10V
T
A
= +25°
C
T
A
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
I
AS
E
AS
Value
40
±20
11.6
8.2
80
2.55
80
14.7
32.4
Unit
V
V
A
A
A
A
A
mJ
ADVANCED INFORMATION
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 7)
Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH (Note 8)
Avalanche Energy, L = 0.3mH (Note 8)
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
T
A
= +25°
C
Steady State
T
A
= +25°
C
Steady State
T
C
= +25°
C
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.99
153
2.35
64.5
14.8
-55 to +175
Unit
W
°
C/W
W
°
C/W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
40
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.7
9.1
12.9
0.8
1030
324
27
1.82
6.8
14.2
2.0
2.7
3.1
3.1
14.2
5.8
19.6
8.2
Max
—
1
±100
3
11.5
18
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 8.5A
V
GS
= 0V, I
S
= 10A
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DD
= 20V, I
D
= 10A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
pF
Ω
nC
ns
V
DD
= 20V, V
GS
= 10V,
R
g
= 6Ω, I
D
= 10A
ns
nC
I
F
= 10A, di/dt = 100A/μs
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
=+ 25°
C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMTH4008LFDFWQ
D
atasheet number: DS39771 Rev. 3 - 2
2 of 7
www.diodes.com
January 2018
© Diodes Incorporated
DMTH4008LFDFWQ
30.0
25.0
I
D
, DRAIN CURRENT (A)
20.0
15.0
10.0
5.0
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
V
GS
=2.8V
V
GS
= 3.0V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 6.0V
V
GS
= 10.0V
V
GS
= 3.5V
30
V
DS
= 5.0V
25
I
D
, DRAIN CURRENT (A)
20
15
10
5
0
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
T
J
=125℃
T
J
=150℃
T
J
=175℃
T
J
=85℃
T
J
=25℃
T
J
=-55℃
ADVANCED INFORMATION
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (W)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(W)
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
30
V
GS
= 10V
V
GS
= 4.5V
0.2
0.15
0.1
0.05
I
D
= 10A
0
0
4
8
12
16
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(W)
0.018
V
GS
= 10V
R
DS(ON)
, DRAIN-SOURCE ON-
RESISTANCE (NORMALIZED)
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
175℃
150℃
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
V
GS
= 10V, I
D
= 10A
125℃
85℃
25℃
-55℃
V
GS
= 4.5V, I
D
= 8.5A
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMTH4008LFDFWQ
D
atasheet number: DS39771 Rev. 3 - 2
3 of 7
www.diodes.com
January 2018
© Diodes Incorporated
DMTH4008LFDFWQ
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(W)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.025
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
f=1MHz
25
I
S
, SOURCE CURRENT (A)
C
T
, JUNCTION CAPACITANCE (pF)
V
GS
= 0V
C
iss
1000
I
D
= 250μA
I
D
= 1mA
0.02
V
GS
= 4.5V, I
D
= 8.5A
0.015
ADVANCED INFORMATION
0.01
V
GS
= 10V, I
D
= 10A
0.005
0
-50
-25
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
20
C
oss
100
15
T
A
= 85℃
T
A
= 25℃
T
A
= -55℃
10
T
A
= 125℃
T
A
= 150℃
T
A
= 175℃
C
rss
10
5
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
1
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
R
DS(ON)
Limited
P
W
=100µs
I
D
, DRAIN CURRENT (A)
8
10
V
GS
(V)
6
1
4
V
DS
= 20V, I
D
= 10A
0.1
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
T
J(Max)
= 175℃ T
C
= 25℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
0.01
P
W
=10s
DC
100
2
0
0
2
4
6
8
Qg (nC)
10
12
14
16
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
DMTH4008LFDFWQ
D
atasheet number: DS39771 Rev. 3 - 2
4 of 7
www.diodes.com
January 2018
© Diodes Incorporated
DMTH4008LFDFWQ
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
ADVANCED INFORMATION
D=0.02
0.01
D=0.01
D=0.005
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 149℃/W
Duty Cycle, D = t1 / t2
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
10
100
1000
D=Single Pulse
0.001
0.0001
0.001
Figure 13. Transient Thermal Resistance
DMTH4008LFDFWQ
D
atasheet number: DS39771 Rev. 3 - 2
5 of 7
www.diodes.com
January 2018
© Diodes Incorporated
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