DMT43M8LFV
40V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (Type UX)
Product Summary
BV
DSS
R
DS(ON)
max
4mΩ @ V
GS
= 10V
40V
5.5mΩ @ V
GS
= 4.5V
63A
I
D
max
T
C
= +25°
C
87A
Features and Benefits
Low R
DS(ON)
– Ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI 3333-8 (Type UX)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.030 grams (Approximate)
Pin1
S
S
S G
®
PowerDI3333-8 (Type UX)
D
G
D
Top View
D D
D
S
Equivalent Circuit
Bottom View
Ordering Information
(Note 4)
Part Number
DMT43M8LFV-7
DMT43M8LFV-13
Notes:
Case
PowerDI3333-8 (Type UX)
PowerDI3333-8 (Type UX)
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YYWW
T43= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
T43
PowerDI is a registered trademark of Diodes Incorporated.
DMT43M8LFV
Document number: DS40844 Rev. 2 - 2
1 of 7
www.diodes.com
May 2018
© Diodes Incorporated
DMT43M8LFV
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 1mH (Note 7)
Avalanche Energy, L = 1mH (Note 7)
T
C
= +25°
C
T
C
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
I
AS
E
AS
Value
40
±20
87
72
120
56
120
14
98
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
JA
P
D
R
JC
T
J,
T
STG
Value
2.25
56
45.4
3.3
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Bodyy Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
40
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.6
3.1
4.2
0.8
3213
1108
55
2.12
44.4
21.1
6.0
8.7
5.5
8.6
24.9
9.6
27.6
39.5
Max
—
1
±100
2.5
4
5.5
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 15A
V
GS
= 0V, I
S
= 20A
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 20V, I
D
= 20A
pF
Ω
nC
ns
V
DD
= 20V, V
GS
= 10V,
R
G
= 1.6Ω, I
D
= 20A
ns
nC
I
F
= 15A, di/dt = 400A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMT43M8LFV
Document number: DS40844 Rev. 2 - 2
2 of 7
www.diodes.com
May 2018
© Diodes Incorporated
DMT43M8LFV
30.0
V
GS
= 3.0V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
25
30
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
20.0
V
GS
= 10V
V
GS
= 2.7V
20
15.0
15
10.0
V
GS
= 2.5V
5.0
V
GS
= 2.2V
0.0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.008
5
10
T
J
= 150℃
T
J
= 125℃
5
T
J
= 85℃
T
J
= 25℃
T
J
= -55℃
3.5
0
1
1.5
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
I
D
= 20A
0.08
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.006
V
GS
= 4.5V
0.004
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.1
0.06
0.04
I
D
= 15A
0.02
V
GS
= 10V
0.002
0
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0
0
2
4
6
8 10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.006
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
V
GS
= 10V
T
J
= 150℃
0.005
T
J
= 125℃
0.004
T
J
= 85℃
0.003
1.8
V
GS
= 10V, I
D
= 20A
1.6
1.4
1.2
T
J
= 25℃
1
V
GS
= 4.5V, I
D
= 15A
0.002
T
J
= -55℃
0.8
0.001
0
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
3 of 7
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5
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
DMT43M8LFV
Document number: DS40844 Rev. 2 - 2
May 2018
© Diodes Incorporated
DMT43M8LFV
0.01
2.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2
1.8
I
D
= 1mA
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
10000
V
GS
= 0V
C
T
, JUNCTION CAPACITANCE (pF)
25
I
S
, SOURCE CURRENT (A)
C
iss
f = 1MHz
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D
= 250μA
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.008
0.006
V
GS
= 4.5V, I
D
= 15A
0.004
0.002
V
GS
= 10V, I
D
= 20A
0
30
1000
20
C
oss
15
T
J
= 150
o
C
T
J
= 125
o
C
5
T
J
=
85
o
C
T
J
= -55
o
C
100
C
rss
10
10
T
J
= 25
o
C
0
0
1
0.3
0.6
0.9
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.2
0
10
20
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
R
DS(ON)
Limited
40
10
1000
8
I
D
, DRAIN CURRENT (A)
100
P
W
= 100µs
P
W
= 1ms
6
V
GS
(V)
10
4
V
DS
= 20V, I
D
= 20A
2
1
P
W
= 10ms
T
J(Max)
= 150℃
T
C
= 25℃
P
W
= 100ms
Single Pulse
P
W
= 1s
DUT on 1*MRP
Board
P
W
= 10s
V
GS
= 10V
DC
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
0.1
0
0
5
10
25 30 35 40
Q
g
(nC)
Figure 11. Gate Charge
15
20
45
50
0.01
0.01
DMT43M8LFV
Document number: DS40844 Rev. 2 - 2
4 of 7
www.diodes.com
May 2018
© Diodes Incorporated
DMT43M8LFV
1
D=0.7
D=0.5
r(t), TRANSIENT THERMAL RESISTANCE
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 136℃/W
Duty Cycle, D = t1 / t2
0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
1000
10000 100000 1000000
D=Single Pulse
0.001
1E-06
1E-05
0.0001
DMT43M8LFV
Document number: DS40844 Rev. 2 - 2
5 of 7
www.diodes.com
May 2018
© Diodes Incorporated
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