DMT3006LFVQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (Type UX)
Product Summary
BV
DSS
R
DS(ON)
Max
7mΩ @ V
GS
= 10V
11mΩ @ V
GS
= 4.5V
I
D
Max
T
C
= +25°
C
60A
Features
Low R
DS(ON)
– Ensures On-State Losses are Minimized
100% Unclamped Inductive Switching (Test in Production) –
Ensures More Reliable and Robust End Application
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
ADVANCED INFORMATION
ADVANCED INFORMATION
30V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: PowerDI 3333-8 (Type UX)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.03 grams (Approximate)
Pin1
S
S
S G
®
Applications
Power Management Functions
Analog Switch
D
G
D
Top View
D D
D
S
Equivalent Circuit
Bottom View
Ordering Information
(Note 5)
Part Number
DMT3006LFVQ-7
DMT3006LFVQ-13
Notes:
Case
PowerDI3333-8 (Type UX)
PowerDI3333-8 (Type UX)
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YYWW
FV6 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
FV6
PowerDI is a registered trademark of Diodes Incorporated.
DMT3006LFVQ
Document number: DS40799 Rev. 2 - 2
1 of 7
www.diodes.com
May 2018
© Diodes Incorporated
DMT3006LFVQ
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
= 10V (Note 8)
Steady
State
T
C
= +25°
C
T
C
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
SM
I
AS
E
AS
Value
30
±20
60
45
2
90
90
24
29
Unit
V
V
A
A
A
A
A
mJ
ADVANCED INFORMATION
ADVANCED INFORMATION
Maximum Body Diode Forward Current (Note 8)
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
Pulsed Drain Body Diode Forward Current (380μs Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH) (Note 9)
Avalanche Energy (L = 0.1mH) (Note 9)
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.0
130
2.0
63
2.9
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
(Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS
(Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
5.6
8.0
0.70
1,155
456
72
1.6
8.4
16.7
2.2
3.5
3.5
5.5
13.5
4.6
19.3
8.6
Max
—
1
±100
3.0
7
11
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
= +20V, V
DS
= 0V
V
GS
= -16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 9.0A
V
GS
= 4.5V, I
D
= 8.5A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f =1.0MHz
V
DD
= 15V, I
D
= 9A
pF
Ω
nC
ns
V
DD
= 15V, V
GS
= 10V,
R
G
= 3Ω, I
D
= 9A
ns
nC
I
F
= 1.5A, di/dt = 100A/μs
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
DMT3006LFVQ
Document number: DS40799 Rev. 2 - 2
2 of 7
www.diodes.com
May 2018
© Diodes Incorporated
DMT3006LFVQ
50
45
V
GS
= 10V
V
GS
= 4V
30
V
GS
= 3.5V
V
DS
= 5.0V
I
D
, DRAIN CURRENT (A)
40
35
30
25
20
V
GS
= 2.7V
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 3V
25
I
D
, DRAIN CURRENT (A)
20
ADVANCED INFORMATION
ADVANCED INFORMATION
15
T
J
= 150°
C
T
J
= 125°
C
T
J
= 25°
C
T
J
= -55°
C
15
10
5
V
GS
= 2.2V
V
GS
= 2.5V
10
T
J
= 85°
C
5
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
0
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.012
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
I
D
= 10A
I
D
= 20A
0.010
0.008
V
GS
= 4.5V
0.006
V
GS
= 10V
0.004
0.002
0.04
0.02
0
2
6
8 10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
4
0.000
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 10V
30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.012
2
1.8
1.6
1.4
V
GS
= 10V
V
GS
= 4.5V
I
D
= 10A
0.008
T
J
= 125°
C
T
J
= 150°
C
T
J
= 85°
C
0.006
T
J
= 25°
C
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.01
1.2
1
0.8
0.6
I
D
= 20A
0.004
T
J
= -55°
C
0.002
0
0
5
10
15
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
20
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMT3006LFVQ
Document number: DS40799 Rev. 2 - 2
3 of 7
www.diodes.com
May 2018
© Diodes Incorporated
DMT3006LFVQ
0.02
R
DS(ON)
, DRAI N-SO URCE O N-RESI STANCE (
)
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
2.5
2
0.015
V
GS
= 4.5V
I
D
= 10A
ADVANCED INFORMATION
ADVANCED INFORMATION
1.5
I
D
= 250µ
A
I
D
= 1mA
0.01
1
0.005
V
GS
= 10V
I
D
= 20A
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure
Gate Threshold
Variation
vs. Junction Temperature
Figure 8
8 Gate Threshold
Variation
vs. Ambient Temperature
10000
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
1000
C
oss
0
-50
30
25
I
S
, SOURCE CURRENT (A)
20
T
J
= 150°
C
15
T
J
= 125°
C
T
J
= 25°
C
100
For Figure 10,11, plz copy
DMT36M1LPS Fig.10,11
C
rss
10
T
J
= 85°
C
T
J
= -55°
C
10
5
1
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
30
10
1000
R
DS(on)
Limited
I
D
, DRAIN CURRENT (A)
8
100
P
W
= 100µ
s
V
GS
(V)
6
10
DC
P
W
= 10s
4
V
DS
= 15V, I
D
= 12A
2
1
P
W
= 1s
T
J (m ax )
= 150°
C
C
0.1
T
C
= 25°
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
0
0
5
10
Q
g
(nC)
15
20
25
0.01
0.01
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
Figure 11. Gate Charge
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMT3006LFVQ
Document number: DS40799 Rev. 2 - 2
4 of 7
www.diodes.com
May 2018
© Diodes Incorporated
DMT3006LFVQ
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
ADVANCED INFORMATION
ADVANCED INFORMATION
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 130°
C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
D = Single Pulse
0.001
0.0001
0.001
DMT3006LFVQ
Document number: DS40799 Rev. 2 - 2
5 of 7
www.diodes.com
May 2018
© Diodes Incorporated
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