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1N5401G

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27
Categorysemiconductor    Discrete semiconductor   
File Size222KB,3 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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1N5401G Overview

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27

1N5400G THRU 1N5408G
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
3.0 Amperes
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
3.0 ampere operation at T
A
=105 with no thermal runaway
Typical I
R
less than 0.1 A
High temperature soldering guaranteed:
350 /10 seconds, 0.375” (9.5mm) lead length,
5 lbs. (2.3Kg) tension
Mechanical Data
Case:
DO-201AD molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.042 ounce, 1.195 grams
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.283
0.189
0.048
1.000
Max.
0.374
0.208
0.051
-
Min.
7.20
4.80
1.20
25.40
mm
Max.
9.50
5.30
1.30
-
Note
Maximum Ratings and Electrical Characteristics
Symbols
1N
5400G
@25
unless otherwise specified
1N
5401G
1N
5402G
1N
5404G
1N
5406G
1N
5407G
1N
5408G
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Average forward current T
A
=105
Peak forward surge current
8.3mS half sine-wave
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
Operating and storage temperature range
Note:
(1) Pulse test: Pulse width 300uSec, Duty cycle 1%
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
50
35
50
100
70
100
200
140
200
400
280
400
3.0
200.0
1.1
5.0
50.0
40
30
-65 to +175
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
A
F
/W
I
FM
=3.0A; T
J
=25
(Note 1)
T
J
=25
T
J
=125
Measure at 1.0MHz,
V
R
=4.0V
V
F
I
R
C
J
R
JA
T
J
, T
STG
1

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