1N5407G datasheet, PDF - EEWORLD Datasheet

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1N5407G: Description3 A, 800 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size222KB，3 Pages; ManufacturerGood-Ark; Websitehttp://www.goodark.com/

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1N5407G Overview

3 A, 800 V, SILICON, RECTIFIER DIODE

1N5407G Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	ROUND
Package Size	LONG FORM
Terminal form	WIRE
terminal coating	MATTE TIN
Terminal location	AXIAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	ISOLATED
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	800 V
Maximum average forward current	3 A
Maximum non-repetitive peak forward current	200 A

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1N5400G THRU 1N5408G

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage -

50 to 1000 Volts

Forward Current -

3.0 Amperes

Features

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

High temperature metallurgically bonded construction

Glass passivated cavity-free junction

Capable of meeting environmental standards of

MIL-S-19500

3.0 ampere operation at T

=105 with no thermal runaway

Typical I

less than 0.1 A

High temperature soldering guaranteed:

350 /10 seconds, 0.375 (9.5mm) lead length,

5 lbs. (2.3Kg) tension

Mechanical Data

Case:

DO-201AD molded plastic over glass body

Terminals:

Plated axial leads, solderable per

MIL-STD-750, method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

0.042 ounce, 1.195 grams

DIM ENSIONS

DIM

inches

Min.

0.283

0.189

0.048

1.000

Max.

0.374

0.208

0.051

Min.

7.20

4.80

1.20

25.40

Max.

9.50

5.30

1.30

Note

Maximum Ratings and Electrical Characteristics

Symbols

5400G

@25

unless otherwise specified

5401G

5402G

5404G

5406G

5407G

5408G

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Average forward current T

=105

Peak forward surge current

8.3mS half sine-wave

Maximum instantaneous

forward voltage

Maximum DC reverse current

at rated DC blocking voltage

Typical junction capacitance

Typical thermal resistance

Operating and storage temperature range

Note:

(1) Pulse test: Pulse width 300uSec, Duty cycle 1%

RRM

RMS

F(AV)

FSM

100

200

140

200

400

280

400

3.0

200.0

1.1

5.0

50.0

-65 to +175

600

420

600

800

560

800

1000

700

1000

Volts

Amps

Volts

=3.0A; T

=25

(Note 1)

=25

=125

Measure at 1.0MHz,

=4.0V

, T

STG

1N5407G Related Products

	1N5407G	1N5400G	1N5401G	1N5402G	1N5404G	1N5406G
Description	3 A, 800 V, SILICON, RECTIFIER DIODE	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE

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