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RJK6013DPE-00-J3

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size67KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJK6013DPE-00-J3 Overview

Silicon N Channel MOS FET High Speed Power Switching

RJK6013DPE-00-J3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeSC-83
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)33 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
RJK6013DPE
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1535-0100
Rev.1.00
Apr 04, 2007
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
1
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
600
±30
11
33
11
33
4
0.87
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1535-0100 Rev.1.00 Apr 04, 2007
Page 1 of 3

RJK6013DPE-00-J3 Related Products

RJK6013DPE-00-J3 RJK6013DPE
Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code SC-83 SC-83
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code compli compli
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (ID) 11 A 11 A
Maximum drain-source on-resistance 0.7 Ω 0.7 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 33 A 33 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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