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RHP20

Description
2.25 A, 20000 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size55KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

RHP20 Overview

2.25 A, 20000 V, SILICON, RECTIFIER DIODE

RHP20 Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionR-XUFM-X2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)33 V
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current2.25 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20000 V
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
KHP
KILOVOLT HIGH CURRENT
RECTIFIER ASSEMBLIES
RHP
MATCHED SILICON RECTIFIER ELEMENTS
RATED CURRENT TO 3.0 AMPERES
PRV 5,000 TO 50,000 VOLTS
FAST RECOVERY (RHP SERIES)
ALL APPLICABLE MIL-STD-750 TESTS
HIGH THERMAL CONDUCTIVITY ENCAPSULATION
Peak
ReverseVoltage
PRV (Volts)
5,000
6,000
7,000
8,000
9,000
10,000
15,000
20,000
25,000
30,000
35,000
40,000
50,000
5,000
6,000
7,000
8,000
9,000
10,000
15,000
20,000
25,000
30,000
35,000
40,000
50,000
Avg. Fwd.Current
I
O
at 25
o
C
(Am ps)
3.00
2.75
2.75
2.75
2.50
2.50
2.50
2.25
2.25
2.25
2.25
2.25
2.25
2.50
2.50
2.50
2.50
2.50
2.50
2.25
2.25
2.25
2.25
2.25
2.25
2.25
Max. Fwd Voltage
Drop at 25
o
C and
3 Amps
V
F
(Volts)
8
9
10
11
14
15
21
28
36
42
49
63
70
10
11
12
13
16
17
25
33
42
50
58
65
82
Dim ens ion
L
Inches
Fig .3
4.00
4.75
5.50
6.00
6.50
7.00
4.00
6.00
8.00
4.00
6.00
8.00
6.00
4.00
4.75
5.50
6.00
6.50
7.00
4.00
6.00
8.00
4.00
6.00
8.00
6.00
Dim ens ion
W
Inches
Fig .3
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
3.0
3.0
3.0
4.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
3.0
3.0
3.0
4.0
EDI Type No.
Case
Sty le
Fig .3
A
A
A
A
A
A
B
B
B
B
B
B
B
A
A
A
A
A
A
B
B
B
B
B
B
B
STANDARD RECOVERY
KHP5
KHP6
KHP7
KHP8
KHP9
KHP10
KHP15
KHP20
KHP25
KHP30
KHP35
KHP40
KHP50
RHP5
RHP6
RHP7
RHP8
RHP9
RHP10
RHP15
RHP20
RHP25
RHP30
RHP35
RHP40
RHP50
200 NANOSECOND RECOVERY (FIG.4)
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
o
Max. DC Reverse Current @ PRV and 25 C, I
R
KHP SERIES
STANDARD
RECOVERY
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 C, I
R
o
RHP SERIES
FAST
RECOVERY
5
100
A
A
5
A
Max. DC Reverse Current @ PRV and 100 C, I
R
Ambient Operating Temperature Range,T
A
o
o
Max. DC Reverse Current @ PRV and 100 C, I
R
250
A
-55
o
C to +150
o
C
-55
o
C to +150
o
C
400 Amps
40 Amps
Max. Reverse Recovery Time , T
rr
(Fig.4)
200 nanosec
-55
o
C to +150
o
C
-55
o
C to +150
o
C
240 Amps
25
Amps
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,I
FRM
Ambient Operating Temperature Range,T
A
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,I
FRM
EDI reserves the right to change these specifications at any time without notice.
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