RC
FAST RECOVERY 200 NANOSECOND
SILICON RECTIFIER
SMALL SIZE
LOW LEAKAGE
HIGH TEMPERATURE STABILITY
HIGH SURGE CAPABILITY
EDI
Type
RC05
RC10
RC20
RC40
RC60
RC80
RC100
PRV
Volts
50
100
200
400
600
800
1000
o
Maximum Reverse
RECOVERY TIME
IN NANOSECONDS
(Fig.4)
200
200
200
200
200
200
200
ELECTRICAL CHARACTERISTICS(at
T
A
=25 C Unless Otherwise Specified)
1 Amp
50 Amp
1.4V olts
1
A
50
o
Average Rectif ied Forward Current @ 50 C, I
O
Max. Peak Surge Current , I
FSM
(8.3
ms)
Max. Forward Voltage Drop @ 1
Amp,
V
F
Max. DC Reverse Current @ P RV and 25 C, I
R
Max. DC Reverse Current @ PRV and100 C, I
R
Trr (Reverse Recovery time), Fig. 4
o
o
A
200 nanosec Max
125nanosec Typical
Ambient Operating Temperature Range, T
A
Storage Temperature Range, T
STG
-55
o
C to +150
o
C
-55
o
C to +175
o
C
NOTE:
Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 C
RC
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
FIG.2
NON-REPETITIVE SURGE CURRENT
0.1SEC
1.0SEC
100
100
% RATED FWD CURRENT
50
% MAXIMUM SURGE
75
75
50
25
25
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7 8 9 10
20
30
40 50 60
O
AMBIENT TEMPERATURE
( C)
CYCLES(60 Hz)
FIG.3
.030
DIA.
.033
1.0 MIN.
.380 MAX.
1.0 MIN.
.160 MAX.
TEST CIRCUIT
FIG.4
TYPICAL REVERSE RECOVERY WAVEFORM
T RR
R1
50 OHM
D.U.T.
PULSE
GENERATOR
R2
1 OHM
SCOPE
+
ZERO
0.5A
REFERENCE
-
1.0A
0.25A
R1, R2 NON-INDUCTIVE RESISTORS
PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV
.
I KC REP.RA
TE, 10
SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
EDI
reserves the right to change these specifications at any time whthout notice.
ELECTRONIC DEVICES, INC.
DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE
* YONKERS. NEW YORK 10710 914-965-4400
* FAX 914-965-5531
* 1-800-678-0828
Ee-mail:sales@edidiodes.com
*
Wwebsite:http://
www.edidiodes.com
Embedded System
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