RAB080 datasheet, PDF - EEWORLD Datasheet

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RAB080: Description3 A, 800 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size74KB，2 Pages; ManufacturerEDI [Electronic devices inc.]

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RAB080 Overview

3 A, 800 V, SILICON, RECTIFIER DIODE

RAB080 Parametric

Parameter Name	Attribute value
Maker	EDI [Electronic devices inc.]
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	240 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	0.25 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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RAB HAB

3 AMPERE AXIAL LEAD RECTIFIERS

PRV TO 1,000 VOLTS

FAST RECOVERY (RAB SERIES)

HIGH TEMPERATURE STABILITY

HIGH SURGE CAPABILITY

PRV

HAB STANDARD RECOVERY

RAB FAST RECOVER

Y

50V

HAB005

RAB005

100V

HAB010

RAB010

200V

HAB020

RAB020

400V

HAB040

RAB040

600V

HAB060

RAB060

800V

HAB080

RAB080

1000V

HAB100

RAB100

ELECTRICAL CHARACTERISTICS

at

T

A

=25°C

Unless

O therwi se

HAB SERIES

STANDARD

RECOVERY

5

vv

A

ELECTRICAL CHARACTERISTICS

at

T

A

=25°C

Unless

Otherwise

RAB SERIES

FAST

RECOVERY

5

vv

A

Specified

Max. DC Reverse Current @ PRV

and 25

o

C, I

R

Max. DC Reverse Current @ PRV

and100

o

C, I

R

Max.Forward Voltage Drop

@3.0Amp, V

F

Ambient Operating Temperature

Range,T

A

Storage Temperature Range,T

STG

Specified

Max. DC Reverse Current @ PRV

and 25

o

C, I

R

150

A

00

Max. DC Reverse Current @ PRV

and100

o

C, I

R

00

250

A

1.1 Volts

Max.Forward Voltage Drop

@3.0Amp V

F

1.4 Volts

-55

o

C to

+150

o

C

-55

o

C to

+150

o

C

Max. Rever se Recov ery

Time, T

rr

(Fig.4)

Ambient

Range,T

A

Storage Temperature Range,T

STG

Op erating

Temperature

250 nanosec

-55

o

C to

+150

o

C

-55

o

C to

+150

o

C

Max. One -Half Cycle Surge Current,

-

I

FM

(Surge) @ 60H

Z

300 Amps

Max.One - Half Cycle Surge Current,

I

FM

(Surge) @ 60H

Z

240 Amps

EDI reserves the right to change these specifications at any time without notice.

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