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RAB010

Description
3 A, 100 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size74KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Environmental Compliance
Download Datasheet Parametric View All

RAB010 Overview

3 A, 100 V, SILICON, RECTIFIER DIODE

RAB010 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEDI [Electronic devices inc.]
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current240 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.25 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
RAB HAB
3 AMPERE AXIAL LEAD RECTIFIERS
PRV TO 1,000 VOLTS
FAST RECOVERY (RAB SERIES)
HIGH TEMPERATURE STABILITY
HIGH SURGE CAPABILITY
PRV
HAB STANDARD RECOVERY
RAB FAST RECOVER
Y
50V
HAB005
RAB005
100V
HAB010
RAB010
200V
HAB020
RAB020
400V
HAB040
RAB040
600V
HAB060
RAB060
800V
HAB080
RAB080
1000V
HAB100
RAB100
ELECTRICAL CHARACTERISTICS
at
T
A
=25°C
Unless
O therwi se
HAB SERIES
STANDARD
RECOVERY
5
vv
A
ELECTRICAL CHARACTERISTICS
at
T
A
=25°C
Unless
Otherwise
RAB SERIES
FAST
RECOVERY
5
vv
A
Specified
Max. DC Reverse Current @ PRV
and 25
o
C, I
R
Max. DC Reverse Current @ PRV
and100
o
C, I
R
Max.Forward Voltage Drop
@3.0Amp, V
F
Ambient Operating Temperature
Range,T
A
Storage Temperature Range,T
STG
Specified
Max. DC Reverse Current @ PRV
and 25
o
C, I
R
150
A
00
Max. DC Reverse Current @ PRV
and100
o
C, I
R
00
250
A
1.1 Volts
Max.Forward Voltage Drop
@3.0Amp V
F
1.4 Volts
-55
o
C to
+150
o
C
-55
o
C to
+150
o
C
Max. Rever se Recov ery
Time, T
rr
(Fig.4)
Ambient
Range,T
A
Storage Temperature Range,T
STG
Op erating
Temperature
250 nanosec
-55
o
C to
+150
o
C
-55
o
C to
+150
o
C
Max. One -Half Cycle Surge Current,
-
I
FM
(Surge) @ 60H
Z
300 Amps
Max.One - Half Cycle Surge Current,
I
FM
(Surge) @ 60H
Z
240 Amps
EDI reserves the right to change these specifications at any time without notice.
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