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RA355GP

Description
3 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size79KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet Parametric Compare View All

RA355GP Overview

3 A, SILICON, RECTIFIER DIODE

RA355GP Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionRA, 2 PIN
stateDISCONTINUED
packaging shaperound
Package SizeDISK BUTTON
surface mountYes
Terminal formNO
terminal coatingtin lead
Terminal locationEND
Packaging MaterialsUNSPECIFIED
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationFAST RECOVERY
Phase1
Maximum reverse recovery time0.1500 us
Maximum average forward current3 A
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
RA351GP
THRU
RA357GP
35Amp Glass
Passivated Rectifier
50 to 1000 Volts
RA
A
Features
Glass Passivated Chip
Low Leakage, Low cost
Low Forward Voltage Drop
High Current Capability
For Automotive Applications
Maximum Ratings
Operating Temperature: -55°C to +175°C
Storage Temperature: -55°C to +175°C
MCC
Catalog
Number
Device
Marking
RA351GP
RA352GP
RA353GP
RA354GP
RA355GP
RA356GP
RA357GP
---
---
---
---
---
---
---
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
35V
70V
140V
280V
420V
560V
700V
E
C
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
35A
T
A
= 150°C
Current
Peak Forward Surge
I
FSM
500A 8.3ms, half sine
Current
Maximum
1.0V
I
FM
= 35A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0
µA
T
J
= 25°C
Rated DC Blocking
150µA
T
J
=
1 00 °C
Voltage
Typical Junction
C
J
100pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
DIMENSIONS
INCHES
MIN
.380
.165
.215
.234
----
MM
MIN
9.70
4.20
5.50
6.00
---
DIM
A
B
C
D
E
MAX
.410
.185
.220
.250
5'
MAX
10.40
4.70
5.70
6.40
5'
NOTE
Revision: 4
www.mccsemi.com
2004/04/02

RA355GP Related Products

RA355GP RA352GP RA354GP RA351GP RA353GP RA357GP RA356GP
Description 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE
Number of terminals 2 2 2 2 2 2 2
Number of components 1 1 1 1 1 1 1
Processing package description RA, 2 PIN RA, 2 PIN RA, 2 PIN RA, 2 PIN RA, 2 PIN RA, 2 PIN RA, 2 PIN
state DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED
packaging shape round round round round round round round
Package Size DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
surface mount Yes Yes Yes Yes Yes Yes Yes
Terminal form NO NO NO NO NO NO NO
terminal coating tin lead tin lead tin lead tin lead tin lead tin lead tin lead
Terminal location END END END END END END END
Packaging Materials UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
structure single single single single single single single
Diode component materials silicon silicon silicon silicon silicon silicon silicon
Diode type rectifier diode rectifier diode rectifier diode rectifier diode rectifier diode rectifier diode rectifier diode
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Phase 1 1 1 1 1 1 1
Maximum reverse recovery time 0.1500 us 0.1500 us 0.1500 us 0.1500 us 0.1500 us 0.1500 us 0.1500 us
Maximum average forward current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
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