RA357GP datasheet, PDF - EEWORLD Datasheet

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RA357GP: Description3 A, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size79KB，2 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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RA357GP Overview

3 A, SILICON, RECTIFIER DIODE

RA357GP Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	RA, 2 PIN
state	DISCONTINUED
packaging shape	round
Package Size	DISK BUTTON
surface mount	Yes
Terminal form	NO
terminal coating	tin lead
Terminal location	END
Packaging Materials	UNSPECIFIED
structure	single
Diode component materials	silicon
Diode type	rectifier diode
application	FAST RECOVERY
Phase	1
Maximum reverse recovery time	0.1500 us
Maximum average forward current	3 A

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MCC

Micro Commercial Components

TM

omponents

20736 Marilla Street Chatsworth

!"#

$ % !"#

RA351GP

THRU

RA357GP

35Amp Glass

Passivated Rectifier

50 to 1000 Volts

RA

A

Features

•

Glass Passivated Chip

Low Leakage, Low cost

Low Forward Voltage Drop

High Current Capability

For Automotive Applications

•

Maximum Ratings

Operating Temperature: -55°C to +175°C

Storage Temperature: -55°C to +175°C

MCC

Catalog

Number

Device

Marking

RA351GP

RA352GP

RA353GP

RA354GP

RA355GP

RA356GP

RA357GP

---

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

RMS

Voltage

Maximum

DC

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

D

35V

70V

140V

280V

420V

560V

700V

E

C

B

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I

F(AV)

35A

T

A

= 150°C

Current

Peak Forward Surge

I

FSM

500A 8.3ms, half sine

Current

Maximum

1.0V

I

FM

= 35A;

Instantaneous

V

F

Forward Voltage

T

J

= 25°C*

Maximum DC

Reverse Current At

I

R

5.0

µA

T

J

= 25°C

Rated DC Blocking

150µA

T

J

=

1 00 °C

Voltage

Typical Junction

C

J

100pF

Measured at

Capacitance

1.0MHz, V

R

=4.0V

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

DIMENSIONS

INCHES

MIN

.380

.165

.215

.234

----

MM

MIN

9.70

4.20

5.50

6.00

---

DIM

A

B

C

D

E

MAX

.410

.185

.220

.250

5'

MAX

10.40

4.70

5.70

6.40

5'

NOTE

Revision: 4

www.mccsemi.com

2004/04/02

RA357GP Related Products

	RA357GP	RA352GP	RA354GP	RA351GP	RA353GP	RA355GP	RA356GP
Description	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE
Number of terminals	2	2	2	2	2	2	2
Number of components	1	1	1	1	1	1	1
Processing package description	RA, 2 PIN	RA, 2 PIN	RA, 2 PIN	RA, 2 PIN	RA, 2 PIN	RA, 2 PIN	RA, 2 PIN
state	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED
packaging shape	round	round	round	round	round	round	round
Package Size	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
surface mount	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	NO	NO	NO	NO	NO	NO	NO
terminal coating	tin lead	tin lead	tin lead	tin lead	tin lead	tin lead	tin lead
Terminal location	END	END	END	END	END	END	END
Packaging Materials	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
structure	single	single	single	single	single	single	single
Diode component materials	silicon	silicon	silicon	silicon	silicon	silicon	silicon
Diode type	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Phase	1	1	1	1	1	1	1
Maximum reverse recovery time	0.1500 us	0.1500 us	0.1500 us	0.1500 us	0.1500 us	0.1500 us	0.1500 us
Maximum average forward current	3 A	3 A	3 A	3 A	3 A	3 A	3 A

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