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RA05H8693M-101

Description
RF MOSFET MODULE 866-928MHz 5W 14V, 3 Stage Amp
CategoryWireless rf/communication    Radio frequency and microwave   
File Size111KB,8 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Environmental Compliance
Download Datasheet Parametric Compare View All

RA05H8693M-101 Overview

RF MOSFET MODULE 866-928MHz 5W 14V, 3 Stage Amp

RA05H8693M-101 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMitsubishi
package instructionFLNG,2.26\"H.SPACE
Reach Compliance Codeunknow
Characteristic impedance50 Ω
structureMODULE
Maximum input power (CW)6.02 dBm
Number of functions1
Maximum operating frequency928 MHz
Minimum operating frequency866 MHz
Maximum operating temperature110 °C
Minimum operating temperature-30 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeFLNG,2.26\"H.SPACE
power supply5,14 V
RF/Microwave Device TypesNARROW BAND HIGH POWER
technologyHYBRID
Maximum voltage standing wave ratio3
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA05H8693M
BLOCK DIAGRAM
RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp.
DESCRIPTION
The RA05H8693M is a 5watt RF MOSFET Amplifier Module
that operate in the 866 to 928MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases.
With a gate voltage around 3.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3.8V (typical) and 4V (maximum).
At V
GG
=5V, the typical gate current is 1 mA.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=14V, V
GG
=0V)
• P
out
>5W, I
T
<1.4A @ V
DD
=14V, V
GG
=5V, P
in
=1mW
• I
T
<1.4A @ V
DD
=14V, P
out
=3W(V
GG
control), P
in
=1mW
• Broadband Frequency Range: 866-928MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 60.5 x 14 x 6.4 mm
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H11S
RoHS COMPLIANCE
• RA05H8693M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA05H8693M-101
SUPPLY FORM
Antistatic tray,
20 modules/tray
RA05H8693M
MITSUBISHI ELECTRIC
1/8
2nd Mar 2007

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RA05H8693M-101 RA05H8693M
Description RF MOSFET MODULE 866-928MHz 5W 14V, 3 Stage Amp RF MOSFET MODULE 866-928MHz 5W 14V, 3 Stage Amp
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