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NV25640DWHFT3G

Description
Electrically erasable programmable read-only memory 64KB SPI SER CMOS E EPROM
Categorystorage    storage   
File Size271KB,17 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NV25640DWHFT3G Overview

Electrically erasable programmable read-only memory 64KB SPI SER CMOS E EPROM

NV25640DWHFT3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionSOIC-8
Manufacturer packaging code751BD
Reach Compliance Codecompliant
Factory Lead Time28 weeks 6 days
Maximum clock frequency (fCLK)10 MHz
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.9 mm
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count8192 words
character code8000
Operating modeSYNCHRONOUS
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height1.75 mm
Serial bus typeSPI
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3.9 mm
Maximum write cycle time (tWC)4 ms
Base Number Matches1
NV25080, NV25160,
NV25320, NV25640
EEPROM Serial
8/16/32/64-Kb SPI
Automotive Grade 0
Description
www.onsemi.com
NV25080, NV25160, NV25320, NV25640 are a EERPOM Serial
8/16/32/64−Kb SPI Automotive Grade 0 devices internally organized
as 1K/2K/4K/8Kx8 bits. It features a 32−byte page write buffer and
supports the Serial Peripheral Interface (SPI) protocol. The device is
enabled through a Chip Select (CS) input. In addition, the required bus
signals are clock input (SCK), data input (SI) and data output (SO)
lines. The HOLD input may be used to pause any serial
communication with the NV25xxx device. The device features
software and hardware write protection, including partial as well as
full array protection. Byte Level On−Chip ECC (Error Correction
Code) makes the device suitable for high reliability applications. The
device offers an additional Identification Page which can be
permanently write protected.
Features
SOIC−8
DW SUFFIX
CASE 751BD
TSSOP−8
DT SUFFIX
CASE 948AL
PIN CONFIGURATION
CS
SO
WP
V
SS
1
V
CC
HOLD
SCK
SI
Automotive Temperatures:
SOIC (DW), TSSOP (DT)
V
CC
SI
CS
WP
HOLD
SCK
V
SS
NV25xxx
SO
Grade 0:
−40°C
to +150°C / V
CC
= 2.5 V to 5.5 V
10 MHz SPI Compatible
SPI Modes (0,0) & (1,1)
32−byte Page Write Buffer
Self−timed Write Cycle
Hardware and Software Protection
Additional Identification Page with Permanent Write Protection
NV Prefix for Automotive and Other Applications Requiring Site and
Change Control
Block Write Protection
Protect
1
/
4
,
1
/
2
or Entire EEPROM Array
Low Power CMOS Technology
Program/Erase Cycles:
4,000,000 at 25°C
1,200,000 at +85°C
600,000 at +125°C
300,000 at +150°C
200 Year Data Retention
SOIC, TSSOP 8−lead Packages
This Device is Pb−Free, Halogen Free/BFR Free, and RoHS
Compliant
Figure 1. Functional Symbol
PIN FUNCTION
Pin Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Function
Chip Select
Serial Data Output
Write Protect
Ground
Serial Data Input
Serial Clock
Hold Transmission Input
Power Supply
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
June, 2018
Rev. 1
1
Publication Order Number:
NV25080/D

NV25640DWHFT3G Related Products

NV25640DWHFT3G NV25160DWHFT3G NV25640DTHFT3G NV25320DWHFT3G NV25080DWHFT3G NV25320DTHFT3G NV25160DTHFT3G NV25080DTHFT3G
Description Electrically erasable programmable read-only memory 64KB SPI SER CMOS E EPROM Electrically erasable programmable read-only memory 16KB SPI SER CMOS E EPROM Electrically erasable programmable read-only memory 64KB SPI SER CMOS E EPROM Electrically erasable programmable read-only memory 32KB SPI SER CMOS E EPROM Electrically erasable programmable read-only memory 8KB SPI SER CMOS EE PROM S Electrically erasable programmable read-only memory 32KB SPI SER CMOS E EPROM Electrically erasable programmable read-only memory 16KB SPI SER CMOS E EPROM Electrically erasable programmable read-only memory 8KB SPI SER CMOS EE PROM T
Maximum operating temperature 150 °C 150 °C + 150 C 150 °C 150 °C + 150 C + 150 C + 150 C
Minimum operating temperature -40 °C -40 °C - 40 C -40 °C -40 °C - 40 C - 40 C - 40 C
organize 8KX8 2KX8 8 k x 8 4KX8 1KX8 4 k x 8 2 k x 8 1 k x 8

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