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QPD1019

Description
Radio frequency junction field effect transistor (RF JFET) transistor 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
Categorysemiconductor    Discrete semiconductor    The transistor    The RF transistor    RF junction fet transistor (RF jfets)   
File Size1MB,19 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
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QPD1019 Overview

Radio frequency junction field effect transistor (RF JFET) transistor 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET

QPD1019 Parametric

Parameter NameAttribute value
MakerQorvo
Product CategoryRadio frequency junction field effect transistor (RF JFET) transistor
Shipping restrictionsThis product may require additional documentation for export from the United States.
Transistor typeHEMT
technologyGaN SiC
Gain16.3 dB
Transistor polarityN-Channel
Vds - drain-source breakdown voltage150 V
Vgs-栅源极击穿电压 - 7 V to 2 V
Id-continuous drain current15 A
Maximum drain/gate voltage55 V
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
Pd-power dissipation522 W
Installation styleSMD/SMT
Package/box17.4 mm x 24 mm x 4.31 mm
ConfigurationSingle
working frequency2.9 GHz to 3.3 GHz
development kitQPD1019EVB01
Factory packaging quantity18
QPD1019
500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET
Product Overview
The QPD1019 is a 500 W (P
3dB
) internally matched discrete
GaN on SiC HEMT which operates from 2.9 to 3.3 GHz on
a 50V supply rail. The device is GaN IMFET fully matched
to 50 Ω in an industry standard air cavity package and is
ideally suited for military radar.
RoHS compliant
Evaluation boards are available upon request.
Key Features
x 24.00 x 4.31 mm
17.40
Frequency: 2.9 to 3.3 GHz
Output Power (P
3dB
)
1
: 590 W
Linear Gain
1
: 15.5 dB
Typical DEFF
3dB1
: 69%
Operating Voltage: 50 V
Low thermal resistance package
Pulse capable
Note 1: @ 3.1 GHz
Functional Block Diagram
Applications
Military radar
Civilian radar
Test instrumentation
Ordering
info
Part No.
QPD1019
QPD1019S2
QPD1019EVB01
Description
Tray of 18 QPD1019
Pack of 2 QPD1019
2.9 – 3.3 GHz EVB
Datasheet Rev. C, Nov. 26, 2018 | Subject to change without notice
-
1 of 18
-
www.qorvo.com

QPD1019 Related Products

QPD1019 QPD1019EVB01
Description Radio frequency junction field effect transistor (RF JFET) transistor 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET RF development tool QPD1019, Eval Board 2.9-3.3GHz
Maker Qorvo Qorvo
Product Category Radio frequency junction field effect transistor (RF JFET) transistor RF development tools
Shipping restrictions This product may require additional documentation for export from the United States. Mouser does not currently sell this product.
Factory packaging quantity 18 1
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