QPD1019
500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET
Product Overview
The QPD1019 is a 500 W (P
3dB
) internally matched discrete
GaN on SiC HEMT which operates from 2.9 to 3.3 GHz on
a 50V supply rail. The device is GaN IMFET fully matched
to 50 Ω in an industry standard air cavity package and is
ideally suited for military radar.
RoHS compliant
Evaluation boards are available upon request.
Key Features
x 24.00 x 4.31 mm
17.40
•
•
•
•
•
•
•
Frequency: 2.9 to 3.3 GHz
Output Power (P
3dB
)
1
: 590 W
Linear Gain
1
: 15.5 dB
Typical DEFF
3dB1
: 69%
Operating Voltage: 50 V
Low thermal resistance package
Pulse capable
Note 1: @ 3.1 GHz
Functional Block Diagram
Applications
•
Military radar
•
Civilian radar
•
Test instrumentation
Ordering
info
Part No.
QPD1019
QPD1019S2
QPD1019EVB01
Description
Tray of 18 QPD1019
Pack of 2 QPD1019
2.9 – 3.3 GHz EVB
Datasheet Rev. C, Nov. 26, 2018 | Subject to change without notice
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QPD1019
500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET
Absolute Maximum Ratings
1
Parameter
Breakdown Voltage,BV
DG
Gate Voltage Range, V
G
Drain Current
Gate Current Range, I
G
Power Dissipation, 10% DC
100 uS PW, P
D
, T = 85°C
RF Input Power, 10% DC
100 uS PW, 3.1 GHz, T =
25°C
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
1
Units
V
V
A
mA
W
dBm
°C
°C
Rating
+150
-7 to +2
20
See page 4.
522
+49
320
−65 to +150
Parameter
Operating Temp. Range
Drain Voltage Range, V
D
Drain Bias Current, I
DQ
Drain Current, I
D3
Gate Voltage, V
G4
Power Dissipation, Pulsed
(P
D
)
2, 3
Min
−40
+28
–
–
–
–
Typ
+25
+50
750
15
−2.8
–
Max Units
+85
+55
–
–
–
469
°C
V
mA
A
V
W
Notes:
1.
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Notes:
1.
Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2.
Package base at 85°C
3.
Pulse Width = 100 uS, Duty Cycle = 10%
4.
To be adjusted to desired I
DQ
Pulsed Characterization
–
Load-Pull Performance
–
Power Tuned
1
Parameters
Frequency, F
Linear Gain, G
LIN
Output Power at 3dB
compression point, P
3dB
Drain Efficiency at 3dB
compression point, DEFF
3dB
Gain at 3dB compression point
2.9
15.5
57.7
62.3
12.5
Typical Values
3.1
15.5
57.7
60.5
13.5
3.3
15.8
57.5
60.0
12.8
Unit
GHz
dB
dBm
%
dB
Notes:
1. Test conditions unless otherwise noted: V
D
= +50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
Pulsed Characterization
–
Load-Pull Performance
–
Efficiency Tuned
1
Parameters
Frequency, F
Linear Gain, G
LIN
Output Power at 3dB
compression point, P
3dB
Drain Efficiency at 3dB
compression point, DEFF
3dB
Gain at 3dB compression point,
G
3dB
3.1
16.1
56.4
69.5
13.1
Typical Values
3.3
17.5
55.9
69.3
14.5
3.3
16.7
56.1
66.0
13.7
Unit
GHz
dB
dBm
%
dB
Notes:
1.
Test conditions unless otherwise noted: V
D
= +50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
Datasheet Rev. C, Nov. 26, 2018 | Subject to change without notice
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QPD1019
500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET
RF Characterization – 2.9 – 3.3 GHz EVB Performance At 2.9 GHz
1
Parameter
Linear Gain, G
LIN
Output Power at 3dB compression point, P
3dB
Drain Efficiency at 3dB compression point, DEFF
3dB
Gain at 3dB compression point, G
3dB
Min
–
–
–
–
Typ
15.5
57.0
65.8
12.5
Max
–
–
–
–
Units
dB
dBm
%
dB
Notes:
1.
V
D
= +50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
RF Characterization – 2.9 – 3.3 GHz EVB Performance At 3.1 GHz
1
Parameter
Linear Gain, G
LIN
Output Power at 3dB compression point, P
3dB
Drain Efficiency at 3dB compression point, DEFF
3dB
Gain at 3dB compression point, G
3dB
Min
–
–
–
–
Typ
16.3
57.0
62.3
13.3
Max
–
–
–
–
Units
dB
dBm
%
dB
Notes:
1.
V
D
= +50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
RF Characterization – 2.9 – 3.3 GHz EVB Performance At 3.3 GHz
1
Parameter
Linear Gain, G
LIN
Output Power at 3dB compression point, P
3dB
Drain Efficiency at 3dB compression point, DEFF
3dB
Gain at 3dB compression point, G
3dB
Min
–
–
–
–
Typ
16.3
56.4
65.1
13.3
Max
–
–
–
–
Units
dB
dBm
%
dB
Notes:
1.
V
D
= +50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
RF Characterization – Mismatch Ruggedness at 2.9, 3.1 & 3.3 GHz
1
Symbol Parameter
VSWR
Impedance Mismatch Ruggedness
dB Compression
3
Typical
10:1
Notes:
1. Test conditions unless otherwise noted: T
A
= 25°C, V
D
= 50 V, I
DQ
= 750 mA, 100 uS PW, 10% DC.
2.
Driving input power is determined at pulsed compression under matched condition at EVB output connector.
3.
No spur detected down to the noise floor of Spectrum Analyzer from 0.01 – 8GHz at T
A
= -40°C.
Datasheet Rev. C, Nov. 26, 2018 | Subject to change without notice
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QPD1019
500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET
Maximum Gate Current
Maximum Gate Current Vs. Peak IR Surface Temperature
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
110
120
130
140
150
160
Peak IR Surface Temperature (°C)
170
180
Maximum Gate Current (mA)
Datasheet Rev. C, Nov. 26, 2018 | Subject to change without notice
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QPD1019
500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET
Thermal and Reliability Information – Pulsed
Peak IR Surface Temperature vs. Pulse Width
Package Base Fixed at 85 C
230
220
210
200
190
180
170
160
150
140
130
120
110
100
90
80
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
Pdiss = 259 W
Pdiss = 346 W
Pdiss = 432 W
Peak Channel Temperature ( C)
Pulse Width (S)
Parameter
Thermal Resistance,
(θ
JC
)
Peak IR Surface Temperature
1
(T
CH
)
Thermal Resistance, IR
1
(θ
JC
)
Peak IR Surface Temperature
1
(T
CH
)
Thermal Resistance, IR
1
(θ
JC
)
Peak IR Surface Temperature
1
(T
CH
)
IR
1
1
Refer
Conditions
85°C back side temperature
259 W Pdiss, 100 uS PW, 10% DC
85°C back side temperature
346 W Pdiss, 100 uS PW, 10% DC
85°C back side temperature
432 W Pdiss, 100 uS PW, 10% DC
Values
0.19
134
0.19
152
0.20
170
Units
°C/W
°C
°C/W
°C
°C/W
°C
to the following document
GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Datasheet Rev. C, Nov. 26, 2018 | Subject to change without notice
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