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MT41K64M16TW-107:J TR

Description
Dynamic Random Access Memory DDR3 1G 64MX16 FBGA
Categorysemiconductor    Memory IC    Dynamic random access memory   
File Size16MB,216 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
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MT41K64M16TW-107:J TR Overview

Dynamic Random Access Memory DDR3 1G 64MX16 FBGA

MT41K64M16TW-107:J TR Parametric

Parameter NameAttribute value
MakerMicron
Product Categorydynamic random access memory
typeSDRAM - DDR3L
Data bus width16 bit
organize64 M x 16
Package/boxFBGA-96
storage1 Gbit
maximum clock frequency933 MHz
Supply voltage - max.1.45 V
Supply voltage - min.1.283 V
Supply current—max.63 mA
Minimum operating temperature0 C
Maximum operating temperature+ 95 C
seriesMT41K
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Installation styleSMD/SMT
Factory packaging quantity2000
1Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K256M4 – 32 Meg x 4 x 8 banks
MT41K128M8 – 16 Meg x 8 x 8 banks
MT41K64M16 – 8 Meg x 16 x 8 banks
Description
The 1.35V DDR3L SDRAM device is a low-voltage ver-
sion of the 1.5V DDR3 SDRAM device. Refer to the
DDR3 (1.5V) SDRAM data sheet specifications when
running in 1.5V compatible mode.
• Write leveling
• Multipurpose register
• Output driver calibration
Options
1
• Configuration
– 256 Meg x 4
– 128 Meg x 8
– 64 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball FBGA (8mm x 11.5mm) Rev.
G
– 78-ball FBGA (8mm x 10.5mm) Rev. J
• FBGA package (Pb-free) – x16
– 96-ball FBGA (8mm x 14mm) Rev. G
– 96-ball FBGA (8mm x 14mm) Rev. J
• Timing – cycle time
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
• Operating temperature
– Commercial (0°C
T
C
+95°C)
– Industrial (–40°C
T
C
+95°C)
• Revision
Note:
Marking
256M4
128M8
64M16
JP
DA
JT
TW
-107
-125
-15E
-187E
None
IT
:G / :J
Features
V
DD
= V
DDQ
= +1.35V (1.283V to 1.45V)
Backward compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
Programmable CAS (READ) latency (CL)
Programmable CAS additive latency (AL)
Programmable CAS (WRITE) latency (CWL)
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
T
C
of 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
Self refresh temperature (SRT)
Automatic self refresh (ASR)
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on http://www.micron.com
for available offerings.
Table 1: Key Timing Parameters
Speed Grade
-107
1, 2, 3
-125
1, 2
-15E
1
187E
Notes:
Data Rate (MT/s)
1866
1600
1333
1066
Target
t
RCD-
t
RP-CL
13-13-13
11-11-11
9-9-9
7-7-7
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).
PDF: CCMTD-1725822587-774
1Gb_DDR3L.pdf - Rev. L EN 9/18
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.

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Description Dynamic Random Access Memory DDR3 1G 64MX16 FBGA Dynamic Random Access Memory DDR3 1G 64MX16 FBGA Dynamic Random Access Memory DDR3 1G 128MX8 FBGA Dynamic Random Access Memory DDR3 1G 64MX16 FBGA Dynamic Random Access Memory DDR3 1G 128MX8 FBGA Dynamic Random Access Memory DDR3 1G 128MX8 FBGA Dynamic Random Access Memory DDR3 1G 128MX8 FBGA Dynamic Random Access Memory DDR3 1G 64MX16 FBGA Dynamic Random Access Memory DDR3 1G 64MX16 FBGA
Maker Micron Micron Micron Micron Micron Micron Micron Micron Micron
Product Category dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory
Package/box FBGA-96 FBGA-96 FBGA-78 FBGA-96 FBGA-78 FBGA-78 FBGA-78 FBGA-96 FBGA-96
series MT41K MT41K MT41K MT41K MT41K MT41K MT41K MT41K MT41K
Installation style SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Factory packaging quantity 2000 2000 1000 1368 2000 1440 1440 2000 1368
type SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L - SDRAM - DDR3L - - SDRAM - DDR3L -
Data bus width 16 bit 16 bit 8 bit - 8 bit - - 16 bit -
organize 64 M x 16 64 M x 16 128 M x 8 - 128 M x 8 - - 64 M x 16 -
storage 1 Gbit 1 Gbit 1 Gbit - 1 Gbit - - 1 Gbit -
maximum clock frequency 933 MHz 933 MHz 933 MHz - 933 MHz - - 933 MHz -
Supply voltage - max. 1.45 V 1.45 V 1.45 V - 1.45 V - - 1.45 V -
Supply voltage - min. 1.283 V 1.283 V 1.283 V - 1.283 V - - 1.283 V -
Supply current—max. 63 mA 63 mA 162 mA - 162 mA - - 63 mA -
Minimum operating temperature 0 C - 40 C 0 C - - 40 C - - - 40 C -
Maximum operating temperature + 95 C + 95 C + 95 C - + 95 C - - + 95 C -
Encapsulation Reel Reel Reel Tray Reel Tray Tray Reel Tray
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