Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
| Parameter Name | Attribute value |
| Maker | Micro Electronics |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum collector current (IC) | 0.03 A |
| Collector-emitter maximum voltage | 45 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-18 |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 30 MHz |
| Base Number Matches | 1 |
| BFX92 | BFX76 | BF394 | BCX58 | |
|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
| Maker | Micro Electronics | Micro Electronics | Micro Electronics | Micro Electronics |
| Reach Compliance Code | unknown | unknow | unknown | unknown |
| Maximum collector current (IC) | 0.03 A | 0.05 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 45 V | 45 V | 30 V | 32 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 40 | 140 | 65 | 120 |
| JEDEC-95 code | TO-18 | TO-18 | TO-92 | TO-92 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | METAL | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.3 W | 0.08 W | 0.35 W | 0.625 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 30 MHz | 40 MHz | 80 MHz | 125 MHz |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | - | CYLINDRICAL, O-PBCY-W3 |
| Maximum operating temperature | 175 °C | - | 150 °C | 150 °C |
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