BSR56L datasheet, PDF - EEWORLD Datasheet

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BSR56L: Description40V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-03, 3 PIN; CategoryThe transistor; File Size48KB，2 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BSR56L Overview

40V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-03, 3 PIN

BSR56L Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	CASE 318-03
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
Maximum drain-source on-resistance	24 Ω
FET technology	JUNCTION
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BSR56L Related Products

	BSR56L	BSR58L	BSR57L
Description	40V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-03, 3 PIN	40V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-03, 3 PIN	40V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-03, 3 PIN
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor
Parts packaging code	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Manufacturer packaging code	CASE 318-03	CASE 318-03	CASE 318-03
Reach Compliance Code	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	40 V	40 V	40 V
Maximum drain-source on-resistance	24 Ω	60 Ω	40 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Is it Rohs certified?	incompatible	incompatible	-
JESD-609 code	e0	e0	-
Maximum operating temperature	150 °C	150 °C	-
Peak Reflow Temperature (Celsius)	240	240	-
Terminal surface	TIN LEAD	TIN LEAD	-
Maximum time at peak reflow temperature	30	30	-

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