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MT25QU128ABB1ESE-0AUT TR

Description
NOR flash memory
Categorysemiconductor    Memory IC    NOR flash memory   
File Size1MB,95 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
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MT25QU128ABB1ESE-0AUT TR Overview

NOR flash memory

MT25QU128ABB1ESE-0AUT TR Parametric

Parameter NameAttribute value
MakerMicron
Product CategoryNOR flash memory
Installation styleSMD/SMT
Package/boxSOP2-8
seriesMT25QU
storage128 Mbit
Interface TypeSPI
organize16 M x 8
Timing typeSynchronous
Data bus width8 bit
Supply voltage - min.2.7 V
Supply voltage - max.3.6 V
Supply current—max.35 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 125 C
EncapsulationReel
Factory packaging quantity1500
128Mb, 1.8V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT25QU128ABB
Features
• SPI-compatible serial bus interface
• Single and double transfer rate (STR/DTR)
• Clock frequency
– 166 MHz (MAX) for all protocols in STR
– 90 MHz (MAX) for all protocols in DTR
• Dual/quad I/O commands for increased through-
put up to 90 MB/s
• Supported protocols in both STR and DTR
– Extended I/O protocol
– Dual I/O protocol
– Quad I/O protocol
• Execute-in-place (XIP)
• PROGRAM/ERASE SUSPEND operations
• Volatile and nonvolatile configuration settings
• Software reset
• Additional reset pin for selected part numbers
• Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
• Erase capability
– Bulk erase
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
• Security and write protection
– Volatile and nonvolatile locking and software
write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
• Electronic signature
– JEDEC-standard 3-byte signature (BB18h)
– Extended device ID: Two additional bytes identify
device factory options
• JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
Options
• Voltage
– 1.7–2.0V
• Density
– 128Mb
• Device stacking
– Monolithic
• Device generation
• Die revision
• Pin configuration
– RESET# and HOLD#
• Sector Size
– 64KB
• Packages – JEDEC-standard, RoHS-
compliant
– 24-ball T-PBGA, 05/6mm × 8mm (5 ×
5 array)
– 24-ball T-PBGA 05/6mm × 8mm (4 ×
6 array)
– 8-pin SOP2, 208 mils body width
(SO8W)
– 16-pin SOP2, 300 mils body width
(SO16W)
– W-PDFN-8 6mm × 5mm (MLP8 6mm
× 5mm)
– W-PDFN-8 8mm × 6mm (MLP8 8mm
× 6mm)
• Standard security
• Special options
– Standard
– Automotive
• Operating temperature range
– From –40°C to +85°C
– From –40°C to +105°C
– From –40°C to +125°C
Marking
U
128
A
B
B
8
E
12
14
SE
SF
W7
W9
0
S
A
IT
AT
UT
CCM005-1718347970-10422
mt25q_qlht_U_128_ABB_xxT.pdf - Rev. D 09/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.

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Maker Micron Micron Micron Micron Micron Micron
Product Category NOR flash memory NOR flash memory NOR flash memory NOR flash memory NOR flash memory NOR flash memory
series MT25QU MT25QU MT25QU MT25QU MT25QU MT25QU
Encapsulation Reel Tray Reel Tray Tray Reel
Factory packaging quantity 1500 1800 2000 1440 1122 1000
storage 128 Mbit 128 Mbit 128 Mbit 128 Mbit - 128 Mbit
Interface Type SPI SPI SPI Serial - Serial
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