April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These
N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Features
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
____________
___________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
T
A
= 25°C unless otherwise noted
BS170
60
60
± 20
500
1200
830
6.6
-55 to 150
300
MMBF170
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1M
Ω
)
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
500
800
300
2.4
mA
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistacne, Junction-to-Ambient
150
417
°C/W
© 1997 Fairchild Semiconductor Corporation
BS170 Rev. C / MMBF170 Rev. D
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
V
GS(th)
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
V
GS
= 0 V, I
D
= 100 µA
V
DS
= 25 V, V
GS
= 0 V
V
GS
= 15 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 10 V, I
D
= 200 mA
V
DS
= 10 V, I
D
= 200 mA
V
DS
> 2 V
DS(on)
, I
D
= 200 mA
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
on
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
All
All
All
24
17
7
40
30
10
pF
pF
pF
All
All
All
60
0.5
10
V
µA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
All
All
BS170
MMBF170
0.8
2.1
1.2
320
320
3
5
V
Ω
mS
SWITCHING CHARACTERISTICS
(Note 1)
Turn-On Time
V
DD
= 25 V, I
D
= 200 m A,
V
GS
= 10 V, R
GEN
= 25
Ω
V
DD
= 25 V, I
D
= 500 mA,
V
GS
= 10 V, R
GEN
= 50
Ω
t
off
Turn-Off Time
V
DD
= 25 V, I
D
= 200 m A,
V
GS
= 10 V, R
GEN
= 25
Ω
V
DD
= 25 V, I
D
= 500 mA,
V
GS
= 10 V, R
GEN
= 50
Ω
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
BS170
MMBF170
BS170
MMBF170
10
10
10
10
ns
ns
BS170 Rev. C / MMBF170 Rev. D
Typical Electrical Characteristics
BS170 / MMBF170
2
3
V
GS
= 10V
, DRAIN-SOURCE CURRENT (A)
1.5
9.0
8.0
DRAIN-SOURCE ON-RESISTANCE
V
GS
=4.0V
4.5
5.0
6 .0
7.0
6.0
1
R
DS(on)
, NORMALIZED
2.5
2
7.0
1.5
5.0
0.5
8.0
9.0
10
4.0
3.0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
5
1
I
0
D
0.5
0
0.4
0.8
1.2
I
D
, DRAIN CURRENT (A)
1.6
2
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
2
3
V
G S
= 10V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.75
V
GS
= 10V
2.5
I
D
= 500mA
R
DS(on)
, NORMALIZED
R
DS(ON)
, NORMALIZED
1.5
2
TJ = 125°C
1.25
1.5
25°C
1
1
-55°C
0.5
0.75
0.5
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
0
0
0.4
0.8
1.2
I
D
, DRAIN CURRENT (A)
1.6
2
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
2
GATE-SOURCE THRESHOLD VOLTAGE
1.1
V
DS
= 10V
1.6
I
D
, DRAIN CURRENT (A)
T J = -55°C
25°C
125°C
V
th
, NORMALIZED
1.05
V
DS
= V
GS
I
D
= 1 mA
1
1.2
0.95
0.8
0.9
0.4
0.85
0
0
2
V
GS
4
6
8
, GATE TO SOURCE VOLTAGE (V)
10
0.8
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature
.
BS170 Rev. C / MMBF170 Rev. D
Typical Electrical Characteristics
(continued)
BS170 / MMBF170
1.1
DRAIN-SOURCE BREAKDOWN VOLTAGE
2
I
D
= 100µA
1.075
1.05
1.025
1
0.975
0.95
0.925
-50
I
S
, REVERSE DRAIN CURRENT (A)
1
0.5
V
GS
= 0V
, NORMALIZED
TJ = 125°C
0.1
0.05
25°C
-55°C
BV
DSS
0.01
0.005
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.001
0.2
0.4
V
SD
0.6
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation
with Temperature
.
Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
60
40
V
GS
, GATE-SOURCE VOLTAGE (V)
10
C iss
20
CAPACITANCE (pF)
I
D
= 5 0 0 m A
8
V
DS
= 25V
C oss
10
6
5
C rss
f = 1 MHz
V
GS
= 0V
1
2
V
DS
3
5
10
20
30
50
4
2
2
1
, DRAIN TO SOURCE VOLTAGE (V)
0
0
0.4
0.8
1.2
1.6
2
Q
g
, GATE CHARGE (nC)
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
Output, Vout
V
GS
10%
10%
90%
R
GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
BS170 Rev. C / MMBF170 Rev. D
Typical Electrical Characteristics
(continued)
3
2
1
Li
N)
t
mi
10
S(O
3
2
0u
s
I
D
, DRAIN CURRENT (A)
10
1
0.5
RD
S(
O
Li
N)
t
mi
0u
s
I
D
, DRAIN CURRENT (A)
0.5
1m
10
10
1s
10
s
DC
0m
ms
s
RD
s
1m
10
s
ms
0.1
0.05
0.1
0.05
10
0m
s
V
GS
= 10V
SINGLE PULSE
0.01
0.005
1
2
V
GS
= 10V
SINGLE PULSE
0.01
0.005
1
T
A
= 25°C
1s
10
s
DC
T
A
= 25°C
2
5
10
20
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
60
80
5
10
20
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
60
80
Figure 13. BS170 Maximum
Safe Operating Area
.
Figure 14. MMBF170 Maximum
Safe Operating Area
.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5
0.2
0.1
0.05
0.2
0.1
P(pk)
0.05
R
R
θJA
(t) = r(t) * R
θJA
θJA
= (See Datasheet)
t
1
0.02
0.01
t
2
0.02
0.01
0.0001
Single Pulse
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 15. TO-92, BS170 Transient Thermal Response Curve.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
0.2
0.1
0.05
D = 0.5
0.2
0.1
0.05
0.02
0.01
P(pk)
R
R
θJA
(t) = r(t) * R
θJA
θJA
= (See Datasheet)
0.01
Single Pulse
t
1
t
2
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve
.
BS170 Rev. C / MMBF170 Rev. D
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