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KSB772
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
- 40
- 30
-5
-3
-7
- 0.6
10
1
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= - 30V, I
E
= 0
V
EB
= - 3V, I
C
= 0
V
CE
= - 2V, I
C
= - 20mA
V
CE
= - 2V, I
C
= - 1A
I
C
= - 2A, I
B
= - 0.2A
I
C
= - 2A, I
B
= - 0.2A
V
CE
= - 5V, I
E
= - 0.1A
V
CB
= - 10V, I
E
= 0
f = 1MHz
30
60
220
160
- 0.3
- 1.0
80
55
Min.
Typ.
Max.
-1
-1
400
- 0.5
- 2.0
V
V
MHz
pF
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classificntion
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
G
200 ~ 400
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB772
Typical Characteristics
-2.0
1000
V
CE
= -2V
I
B
= -10mA
I
B
= -9mA
I
B
= -8mA
I
B
= -7mA
I
B
= -6mA
I
B
= -5mA
Ic[A], COLLECTOR CURRENT
-1.6
h
FE
, DC CURRENT GAIN
100
-1.2
-0.8
I
B
= -4mA
I
B
= -3mA
10
-0.4
I
B
= -2mA
I
B
= -1mA
1
0
-4
-8
-12
-16
-20
-1
-10
-100
-1000
-10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(sat),V
BE
(sat)[mV] SATURATION VOLTAGE
-10000
1000
I
C
= 10·I
B
I
E
= 0
f=1MHz
Cob[pF], CAPACITANCE
-1000
V
BE
(sat)
-100
100
10
-10
V
CE
(sat)
-1
-1
-10
-100
-1000
-10000
1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
-10
V
CE
=5V
Ic MAX(Pulse)
10
1m
ms
10
s
0u
s
I
C
[A], COLLECTOR CURRENT
Ic MAX(DC)
-1
100
Dis
s
Lim ipatio
n
ite
d
s/b
Lim
it e
d
10
-0.1
V
CEO
MAX
1
-0.01
-0.01
-0.1
-1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Microcontroller MCU
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