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MR45V200BRAZAARL

Description
F-RAM FeRAM/2M 256K x 8 DIP8
Categorysemiconductor    Memory IC    F - RAM   
File Size253KB,18 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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MR45V200BRAZAARL Overview

F-RAM FeRAM/2M 256K x 8 DIP8

MR45V200BRAZAARL Parametric

Parameter NameAttribute value
MakerROHM Semiconductor
Product CategoryF-RAM
Installation styleThrough Hole
Package/boxDIP-8
storage2 Mbit
Interface TypeSPI
organize256 k x 8
Supply voltage - min.2.7 V
Supply voltage - max.3.6 V
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Working power voltage2.7 V to 3.6 V
Factory packaging quantity1400
FEDR45V200A-01
Issue Date: Jan. 31, 2014
MR45V200A
2M(262,144-Word
8-Bit) FeRAM (Ferroelectric Random Access Memory)
SPI
GENERAL DESCRIPTION
The MR45V200A is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM)
developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V200A is accessed using
Serial Peripheral Interface.Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup
required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks,
such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and
the power consumption during a write can be reduced significantly.
The MR45V200A can be used in various applications, because the device is guaranteed for the write/read
tolerance of 10
12
cycles per bit and the rewrite count can be extended significantly.
FEATURES
262,144-word
8-bit configuration (Serial Peripheral Interface : SPI)
A single 2.7V to 3.6V power supply
Operating frequency:
34MHz
Read/write tolerance
10
12
cycles/bit
Data retention
10 years
Guaranteed operating temperature range
40
to 85C (Extended temperature version)
Package options:
8-pin plastic DIP
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