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SIHF840LCS-GE3

Description
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
CategoryDiscrete semiconductor    The transistor   
File Size148KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SIHF840LCS-GE3 Overview

MOSFET 500V Vds 30V Vgs D2PAK (TO-263)

SIHF840LCS-GE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)510 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)8 A
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.85 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
SiHH20N50E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
max. () at 25 °C
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
70
9
15
Single
Pin 4
FEATURES
550
0.147
• Completely lead (Pb)-free device
• Low figure-of-merit (FOM) R
on
x Q
g
• Low input capacitance (C
iss
)
• Reduced switching and conduction losses
• Ultra low gate charge (Q
g
)
• Avalanche energy rated (UIS)
• Kelvin connection for reduced gate noise
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PowerPAK
®
8 x 8
4
1
2
3
3
Pin 1
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
Pin 2
Pin 3
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK 8 x 8
SiHH20N50E-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain
Current
a
b
SYMBOL
V
DS
V
GS
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
P
D
T
J
, T
stg
T
J
= 125 °C
dV/dt
LIMIT
500
± 30
22
14
53
1.4
286
174
-55 to +150
70
19
UNIT
V
A
W/°C
mJ
W
°C
V/ns
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
c
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 140 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25
,
I
AS
= 4.5 A.
c. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
S16-1262-Rev. A, 27-Jun-16
Document Number: 91847
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHF840LCS-GE3 Related Products

SIHF840LCS-GE3 SIHFL9014TR-GE3 SIHFR430ATR-GE3 SIHFR420TRL-GE3
Description MOSFET 500V Vds 30V Vgs D2PAK (TO-263) MOSFET -60V Vds 20V Vgs SOT-223 MOSFET 500V Vds 30V Vgs DPAK (TO-252) MOSFET 500V Vds 20V Vgs DPAK (TO-252)
Maker Vishay Vishay Vishay Vishay
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown unknown unknown
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 60 V 500 V 500 V
Maximum drain current (Abs) (ID) 8 A 1.8 A 5 A 2.4 A
Maximum drain current (ID) 8 A 1.8 A 5 A 2.4 A
Maximum drain-source on-resistance 0.85 Ω 0.5 Ω 1.7 Ω 3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-261AA TO-252 TO-252
JESD-30 code R-PSSO-G2 R-PDSO-G4 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 2 4 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type N-CHANNEL P-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 3.1 W 110 W 42 W
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE DUAL SINGLE SINGLE
Maximum time at peak reflow temperature 40 30 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it lead-free? Lead free - Lead free Lead free
Is it Rohs certified? conform to - conform to conform to
Parts packaging code D2PAK - TO-252 TO-252
Contacts 4 - 3 3
Other features AVALANCHE RATED AVALANCHE RATED - AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 510 mJ - 130 mJ 400 mJ
Maximum pulsed drain current (IDM) 28 A - 20 A 8 A
Certification status Not Qualified - Not Qualified Not Qualified
JESD-609 code - e3 e3 e3
Humidity sensitivity level - 1 1 1
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
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