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QPD1018EVB

Description
RF development tool QPD1018, Eval Board 2.7-3.1GHz
CategoryEmbedded solution    Engineering tools    Rf/wireless development tools    Rf development tools   
File Size2MB,17 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
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QPD1018EVB Overview

RF development tool QPD1018, Eval Board 2.7-3.1GHz

QPD1018EVB Parametric

Parameter NameAttribute value
MakerQorvo
Product CategoryRF development tools
Shipping restrictionsMouser does not currently sell this product.
productEvaluation Boards
typeRF Amplifiers
Tools for assessmentQPD1018
frequency2.7 GHz to 3.1 GHz
Factory packaging quantity1
QPD1018
500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET
Product Overview
The QPD1018 is a 500 W (P
3dB
) internally matched discrete
GaN on SiC HEMT which operates from 2.7 to 3.1 GHz on
a 50V supply rail. The device is GaN IMFET fully matched
to 50 Ω in an industry standard air cavity package and is
ideally suited for military radar.
ROHS compliant.
Evaluation boards are available upon request.
17.40 x 24.00 x 4.31 mm
Key Features
1
Frequency: 2.7 to 3.1 GHz
Output Power (P
3dB
)
1
: 575 W
Linear Gain
1
: 17.7 dB
Typical PAE
3dB1
: 67.9%
Operating Voltage: 50 V
Low thermal resistance package
Pulse capable
Note 1: @ 2.9 GHz
Functional Block Diagram
Applications
Military radar
Civilian radar
Test instrumentation
Ordering
Information
Part No.
QPD1018
QPD1018S2
QPD1018EVB
Description
Tray of 18 QPD1018
Pack of 2 QPD1018
2.7 – 3.1 GHz EVB
Datasheet Rev. B, Aug 24, 2018 | Subject to change without notice
-
1 of 16
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www.qorvo.com

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Description RF development tool QPD1018, Eval Board 2.7-3.1GHz Radio frequency junction field effect transistor (RF JFET) transistor 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
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