TGA2611-SM
2 – 6 GHz GaN LNA
Product Description
Qorvo's TGA2611-SM is a packaged broadband Low
Noise Amplifier fabricated on Qorvo’s QGaN25 0.25 um
GaN on SiC process. The TGA2611-SM operates from 2
to 6 GHz and typically provides >18 dBm P1dB, > 22 dB
of small signal gain and 30 dBm of OTOI with 1.0 dB NF.
In addition to the high overall electrical performance, this
GaN amplifier also provides a high level of input power
robustness which allows more flexibility in designing the
receive chain circuit protection.
The TGA2611-SM is available in a low cost, surface mount
20-lead 4x4 mm plastic QFN. It is ideally suited to support
both radar and satellite communication applications.
Both RF ports have intergraded DC blocking caps and are
fully matched to 50 ohms.
Product Features
Functional Block Diagram
•
Frequency Range: 2 – 6 GHz
•
NF: 1.0 dB
•
OTOI: 30 dBm @ P
OUT
/Tone = 18 dBm
•
Small Signal Gain: 22 dB
•
Return Loss: > 10 dB
•
P1dB: 18 dBm; P
SAT
= 26 dBm @ P
IN
= 10 dBm
•
Bias: V
D
= 10 V, I
DQ
= 100 mA; V
G
= - 2.3 V (Typical)
•
Package Dimensions: 4.0 x 4.0 x 0.85 mm
Applications
•
Commercial & Military Radar
•
Communications
Ordering Information
Part No.
TGA2611-SM
1097070
Description
2 – 6 GHz GaN LNA
TGA2611-SM Evaluation Board
Data Sheet Rev B, Dec 10, 2018 | Subject to change without notice
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TGA2611-SM
2 – 6 GHz GaN LNA
Absolute Maximum Ratings
Parameter
Drain Voltage (V
D
)
Gate Voltage (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Pow er Dissipation, 85 °C (P
DISS
)
RF Input Pow er, CW, 50 Ω
Channel Temperature (T
CH
)
Mounting Temperature
(30 seconds maximum)
Storage Temperature
Recommended Operating Conditions
Units
V
V
mA
mA
W
dBm
°C
°C
°C
Gate Voltage (V
G
)
Quiescent Drain Current (I
DQ
)
-2.3 V Typical
100 mA
Range / Value
+40
−5 to 0
300
17
6
30
+275
+260
−55 to +150
Parameter
Drain Voltage (V
D
)
10 V
Temperature (T
BASE
)
-40 to 85 °C
Electrical performance is measured under conditions noted in the
electrical specifications table. Specifications are not guaranteed over
all recommended operating conditions.
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical Specifications
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Noise Figure
Output Power @ 1 dB Gain Compression (P
1dB
)
Output TOI
Small Signal Gain Temperature Coefficient
Noise Figure Temperature Coefficient
P
OUT
/ Tone = 18 dBm,
Δf = 10 MHz
Conditions
Min
2
Typ
> 22
> 10
> 10
1
> 18
30
−0.03
0.007
Max
6
Units
GHz
dB
dB
dB
dB
dBm
dBm
dB / °C
dB / °C
Test conditions unless otherw ise noted: T
BASE
= +25 °C, V
D
= 10V, I
DQ
= 100mA, V
G
= -2.3V Typical, CW
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
(1,2,3)
Channel Temperature (T
CH
)
Values
12.6
101.4
Units
°C/W
°C
Conditions
T
BASE
= +85 °C, V
D
= 10 V, I
DQ
= 100 mA,
I
D_DRIVE
= 195 mA, P
IN
= 10 dBm, P
OUT
= 28 dBm,
Freq. = 4 GHz, P
DISS
= 1.3 W, CW
Notes:
1. Thermal resistance is measured to package backside
2. Base or ambient temperature is 85
°
C
3.
Refer to the follow ing document:
GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Data Sheet Rev B, Dec 10, 2018 | Subject to change without notice
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TGA2611-SM
2 – 6 GHz GaN LNA
Performance Plots – Small Signal
Conditions unless otherw ise specified: V
D
= 10 V, I
DQ
= 100 mA, V
G
= -2.3 V Typical, CW
Data Sheet Rev B, Dec 10, 2018 | Subject to change without notice
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3 of 13
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TGA2611-SM
2 – 6 GHz GaN LNA
Performance Plots – Large Signal
Conditions unless otherw ise specified: V
D
= 10 V, I
DQ
= 100 mA, V
G
= -2.3 V Typical, CW
Data Sheet Rev B, Dec 10, 2018 | Subject to change without notice
-
4 of 13
-
www.qorvo.com
TGA2611-SM
2 – 6 GHz GaN LNA
Performance Plots – Large Signal
Conditions unless otherw ise specified: V
D
= 10 V, I
DQ
= 100 mA, V
G
= -2.3 V Typical, CW
Data Sheet Rev B, Dec 10, 2018 | Subject to change without notice
-
5 of 13
-
www.qorvo.com