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QPD0030EVB01

Description
RF development tool Evaluation Board - QPD0030
CategoryEmbedded solution    Engineering tools    Rf/wireless development tools    Rf development tools   
File Size3MB,23 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
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RF development tool Evaluation Board - QPD0030

QPD0030EVB01 Parametric

Parameter NameAttribute value
MakerQorvo
Product CategoryRF development tools
Shipping restrictionsMouser does not currently sell this product.
productEvaluation Boards
typeRF Transistors
Tools for assessmentQPD0030
frequency4 GHz
QPD0030
45 W, 48 V, DC – 4 GHz, GaN RF Power Transistor
General Description
The QPD0030 is a 45 W (P3dB) unmatched discrete GaN
on SiC HEMT which operates from DC to 4GHz on a
+48 V supply rail. It is ideally suited for basestation, radar
and communications applications and can support both
CW and pulsed mode of operations.
The QPD0030 can be used in Doherty architecture for the
final stage of a base station power amplifier for small cell,
microcell, and active antenna systems. The QPD0030 can
also be used as a driver in a macrocell base station power
amplifier.
The device is housed in an industry-standard 4x3 mm
surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
20 Pin 4x3 mm QFN Package
Product Features
Frequency: DC to 4 GHz
Output Power (P
3dB
): 49 W
Linear Gain: 22.3 dB
(1)
Typical PAE
3dB
: 71.5%
(1)
Operating Voltage: +48 V
Low Thermal Resistance Package
CW and Pulse Capable
Note 1: @ 2.2 GHz (Loadpull)
(1)
Functional Block Diagram
Applications
Active Antenna Systems
Macrocell Base Station Driver
Small Cell Final Stage
Land Mobile and Military Radio Communications
Test Instrumentation
Wideband or Narrowband Amplifiers
Ordering Information
Part No.
1132528
Description
45 W, DC – 4 GHz Transistor
QPD0030EVB01 1.2 – 1.4 GHz EVB
QPD0030EVB02 1.8 – 2.2 GHz EVB
Rev. C
© 2018 Qorvo
-
1 of 22
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Disclaimer: Subject to change without notice
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