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LB0SB20WYT\500

Description
Thermal interface product 0402 AlN .020T
CategoryThermal management products    Thermal interface products   
File Size331KB,2 Pages
ManufacturerAVX
Environmental Compliance
Download Datasheet Parametric View All

LB0SB20WYT\500 Overview

Thermal interface product 0402 AlN .020T

LB0SB20WYT\500 Parametric

Parameter NameAttribute value
MakerAVX
Product CategoryThermal interface products
Shipping restrictionsMouser does not currently sell this product.
typeBridge Thermal Conductor
MaterialBeryllium Oxide
length2.03 mm
width1.27 mm
thickness0.508 mm
seriesLB
Package/box0805 (2012 metric)
EncapsulationReel
Thermal resistance11 C/W
Factory packaging quantity500
λ Bridge Thermal Conductor
A\/X’s new λ-Bridge Thermal Conductor is manufactured with the highest
quality materials for reliable and repeatable performance providing a cost
effective thermal management solution. These devices are constructed
with Aluminum Nitride (AlN) or Beryllium Oxide (BeO) and are available in
standard EIA form factors.
λ-Bridge provides the designer with the ability to manage thermal conditions
by directing heat to a thermal ground plane, heat sink or any other specific
thermal point of interest. The inherently low capacitance makes this device
virtually transparent at RF/microwave frequencies. This device has the added
benefit of offering additional layers of protection to adjacent components from
hot spot thermal loads.
λ-Bridge provides the benefit of increased overall circuit reliability. A\/X’s λ-Bridge is manufactured using one-piece
construction, providing a RoHS compliant SMT package that is fully compatible with high speed automated pick-and-
place processing. It is available in 0302, 0402, 0603 and 0805 EIA case sizes. Custom configurations are also available.
FEATURES
• High Thermal Conductivity
• Low Thermal Resistance
• Low Capacitance
• Increases Circuit Reliability
• RoHS Compliant
• More efficient thermal
management
LB
03
A
APPLICATIONS
• GaN Power Amplifiers
• High RF Power Amplifiers
• Filters
• Synthesizers
• Industrial Computers
• Switch Mode Power
Supplies
• Pin & Laser Diodes
25
Thickness
(mils)
• Between active device and adjacent ground planes
• Specific contact pad to case
• Contact pad to contact pad
• Direct component contact to via pad or trace
• Edges fully metalized
FUNCTIONAL APPLICATIONS
HOW TO ORDER
λ-Bridge
Case Size
OS = 0302
02 = 0402
03 = 0603
05 = 0805
W
Style
H
Termination
T
Packaging
Substrate
A = AIN
B = BeO
W = Edge Wrap
E = No Wrap
Y = Silver Platinum,
non-magnetic Termination
S = Silver over Magnetic
Termination
Consult factory for other termination options
e.g., tin plate and solder plate
T = 1000pcs., 7" reel
T\500 = 500pcs., 7" reel
C = Matrix Tray
Size
(EIA)
0302
0402
0603
0805
Length
(L)
0.77 ± 0.051
(0.030 ± 0.002)
1.02 ± 0.051
(0.040 ± 0.002)
0.52 ± 0.051
(0.060 ± 0.002)
2.03 ± 0.051
(0.080 ±.002)
Width
(W)
0.51 ± 0.051
(0.020 ± 0.002)
0.51 ± 0.051
(0.020 ± 0.002)
0.76 ± 0.051
(0.030 ± 0.002)
1.27 ± 0.051
(0.050 ± 0.002)
Standard Thickness
(T, mils)
T1
T2
20
20
25
40
15
15
20
25
Termination
(t)
0.25 ± 0.051
(0.010 ± 0.002)
0.25 ± 0.051
(0.010 ± 0.002)
0.38 ± 0.051
(0.015 ± 0.002)
0.51 ± 0.051
(0.020 ± 0.002)
Capacitance Value (pF)*
Thickness T1 Thickness T2
0.08
0.07
0.06
0.05
0.08
0.06
0.13
0.08
Capacitance Value (pF)*
Thickness T1 Thickness T2
0.07
0.06
0.05
0.04
0.06
0.05
0.10
0.07
Thermal Resistance (
°
C/W)
AlN
Case Size
Thickness T1 Thickness T2
0302
19
24
0402
25
32
0603
20
25
0805
10
16
Thermal Resistance (
°
C/W)
BeO
Case Size
Thickness T1 Thickness T2
0302
12
15
0402
16
21
0603
13
16
0805
7
11
Thermal Conductivity (mW/
°
C)
Thickness T1 Thickness T2
53
41
40
30
50
40
100
60
Thermal Conductivity (mW/
°
C)
Thickness T1 Thickness T2
81
63
61
46
76
61
153
92
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