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MT40A256M16GE-075E AAT:B

Description
Dynamic Random Access Memory DDR4 4G 256MX16 FBGA
Categorysemiconductor    Memory IC    Dynamic random access memory   
File Size12MB,380 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
Download Datasheet Parametric View All

MT40A256M16GE-075E AAT:B Overview

Dynamic Random Access Memory DDR4 4G 256MX16 FBGA

MT40A256M16GE-075E AAT:B Parametric

Parameter NameAttribute value
MakerMicron
Product Categorydynamic random access memory
typeSDRAM - DDR4
Data bus width16 bit
organize256 M x 16
Package/boxFBGA-96
storage4 Gbit
maximum clock frequency1333 MHz
Supply voltage - max.1.26 V
Supply voltage - min.1.14 V
Supply current—max.100 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 105 C
seriesMT40A
EncapsulationTray
Installation styleSMD/SMT
Factory packaging quantity1020
4Gb: x8, x16 Automotive DDR4 SDRAM
Features
Automotive DDR4 SDRAM
MT40A512M8
MT40A256M16
Features
V
DD
= V
DDQ
= 1.2V ±60mV
V
PP
= 2.5V –125mV/+250mV
On-die, internal, adjustable V
REFDQ
generation
1.2V pseudo open-drain I/O
Refresh maximum interval time at T
C
temperature
range:
– 64ms at –40°C to 85°C
– 32ms at 85°C to 95°C
– 16ms at 96°C to 105°C
– 8ms at 106°C to 125°C
16 internal banks ( x8): 4 groups of 4 banks each
8 internal banks (x16): 2 groups of 4 banks each
8n-bit prefetch architecture
Programmable data strobe preambles
Data strobe preamble training
Command/Address latency (CAL)
Multipurpose register read and write capability
Write leveling
Self refresh mode
Low-power auto self refresh (LPASR)
Temperature controlled refresh (TCR)
Fine granularity refresh
Self refresh abort
Maximum power saving
Output driver calibration
Nominal, park, and dynamic on-die termination
(ODT)
Data bus inversion (DBI) for data bus
Command/Address (CA) parity
Databus write cyclic redundancy check (CRC)
Per-DRAM addressability
Connectivity test
Hard post package repair (hPPR) and soft post
package repair (sPPR) modes
JEDEC JESD-79-4 compliant
AEC-Q100
• PPAP submission
Options
1
• Configuration
– 512 Meg x 8
– 256 Meg x 16
• BGA package (Pb-free) – x8
– 78-ball (9mm x 10.5mm) – Rev. B
– 78-ball (7.5mm x 11mm) – Rev. F
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) – Rev. B
– 96-ball (7.5mm x 13.5mm) – Rev. F
• Timing – cycle time
– 0.625ns @ CL = 22 (DDR4-3200)
– 0.750ns @ CL = 18 (DDR4-2666)
– 0.833ns @ CL = 16 (DDR4-2400)
• Product certification
– Automotive
• Operating temperature
– Industrial (–40°C T
C
+95°C)
– Automotive (–40°C T
C
+105°C)
– Ultra-high (–40°C T
C
+125°C)
3
– Revision
Notes:
Marking
512M8
256M16
RH
SA
GE
LY
-062E
-075E
-083E
A
IT
AT
UT
:B :F
1. Not all options listed can be combined to
define an offered product. Use the part cat-
alog search on
http://www.micron.com
for
available offerings.
2. The ×4 device is not offered and the mode
is not supported by the x8 or x16 device
even though some ×4 mode descriptions ex-
ist in the datasheet.
3. The UT option use based on automotive us-
age model. Please contact Micron sales rep-
resentative if you have questions.
4. -062E is only available for die Rev. F.
5. The datasheet is preliminary revision for die
Rev. F.
CCMTD-1725822587-10418
4gb_auto_ddr4_sdram_z90b_z10B.pdf - Rev. H 01/19 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2016 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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