STW70N60DM6 datasheet, PDF - EEWORLD Datasheet

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STW70N60DM6: DescriptionMOSFET N-channel 600 V, 0.037Ohm typ., 62A MDmesh DM6 Power MOSFET in a TO-247 package; Categorysemiconductor Discrete semiconductor The transistor MOSFET; File Size631KB，3 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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STW70N60DM6 Overview

MOSFET N-channel 600 V, 0.037Ohm typ., 62A MDmesh DM6 Power MOSFET in a TO-247 package

STW70N60DM6 Parametric

Parameter Name	Attribute value
Maker	STMicroelectronics
Product Category	MOSFET
technology	Si
Installation style	Through Hole
Package/box	TO-247-3
Number of channels	1 Channel
Transistor polarity	N-Channel
Vds - drain-source breakdown voltage	600 V
Id-continuous drain current	62 A
Rds On - drain-source on-resistance	42 mOhms
Qg-gate charge	106 nC
Configuration	Single
channel mode	Enhancement
Encapsulation	Tube
series	DM6
Factory packaging quantity	600

User Manual

【User Guide】UM1575 Spice model tutorial for Power MOSFETs

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600 V MDmesh™ DM6

fast-recovery SJ MOSFETs

boost ef ciency and robustness

MDmesh™ DM6 fast-recovery body diode technology improves efﬁciency

and system reliability thanks to new lifetime killing process

Combining an optimized

capacitance pro le and lifetime

killing process that results in

a low gate charge (Q

g

), very

low recovery charge (Q

rr

),

low recovery time (t

rr

) and

an excellent improvement in

R

DS(on)

per area, the MDmesh™

DM6 MOSFET series is today’s

reference for full- and half-bridge

topologies.

Thanks to our new MDmesh™

DM6 series, power electronic

designers are now ready for

new scenarios targeting higher

ef ciency and very impressive

power density for super robust

power conversion topologies.

KEY FEATURES

•

Extremely low R

DS(on)

*area and Q

g

and

KEY APPLICATIONS

•

Charging stations for electric vehicles

•

LED lighting

•

Telecom

•

Servers

•

Solar inverters

optimized capacitance proﬁle for light

load conditions

•

Extremely high dv/dt

•

Optimized body diode recovery phase

•

Optimized softness

KEY BENEFITS

•

Extremely high efﬁciency performance

and increased power density

•

More robust power conversion in ZVS,

full and half bridge topologies

•

Higher operation frequencies and better

thermal management

•

Reduced EMI

www.st.com

STW70N60DM6 Related Products

	STW70N60DM6	STW75N60DM6	STWA75N60DM6	STWA70N60DM6	STWA65N60DM6	STW65N60DM6
Description	MOSFET N-channel 600 V, 0.037Ohm typ., 62A MDmesh DM6 Power MOSFET in a TO-247 package	MOSFET N-channel 600 V, 0.032 Ohm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package	MOSFET N-channel 600 V, 0.032 Ohm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package	MOSFET N-channel 600 V, 0.037 Ohm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 long leads package	MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 long leads package	MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package
Maker	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET
technology	Si	Si	Si	Si	Si	Si
Installation style	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package/box	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Number of channels	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel
Transistor polarity	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vds - drain-source breakdown voltage	600 V	600 V	600 V	600 V	600 V	600 V
Id-continuous drain current	62 A	72 A	72 A	62 A	38 A	38 A
Rds On - drain-source on-resistance	42 mOhms	36 mOhms	36 mOhms	42 mOhms	71 mOhms	71 mOhms
Qg-gate charge	106 nC	117 nC	117 nC	106 nC	61 nC	61 nC
Configuration	Single	Single	Single	Single	Single	Single
channel mode	Enhancement	Enhancement	Enhancement	Enhancement	Enhancement	Enhancement
Encapsulation	Tube	Tube	Tube	Tube	Tube	Tube
series	DM6	DM6	DM6	DM6	DM6	DM6
Factory packaging quantity	600	600	600	600	600	600

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