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STWA70N60DM6

Description
MOSFET N-channel 600 V, 0.037 Ohm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size631KB,3 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Download user manual Parametric Compare View All

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STWA70N60DM6 Overview

MOSFET N-channel 600 V, 0.037 Ohm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

STWA70N60DM6 Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Product CategoryMOSFET
technologySi
Installation styleThrough Hole
Package/boxTO-247-3
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage600 V
Id-continuous drain current62 A
Rds On - drain-source on-resistance42 mOhms
Qg-gate charge106 nC
ConfigurationSingle
channel modeEnhancement
EncapsulationTube
seriesDM6
Factory packaging quantity600
600 V MDmesh™ DM6
fast-recovery SJ MOSFETs
boost ef ciency and robustness
MDmesh™ DM6 fast-recovery body diode technology improves efficiency
and system reliability thanks to new lifetime killing process
Combining an optimized
capacitance pro le and lifetime
killing process that results in
a low gate charge (Q
g
), very
low recovery charge (Q
rr
),
low recovery time (t
rr
) and
an excellent improvement in
R
DS(on)
per area, the MDmesh™
DM6 MOSFET series is today’s
reference for full- and half-bridge
topologies.
Thanks to our new MDmesh™
DM6 series, power electronic
designers are now ready for
new scenarios targeting higher
ef ciency and very impressive
power density for super robust
power conversion topologies.
KEY FEATURES
Extremely low R
DS(on)
*area and Q
g
and
KEY APPLICATIONS
Charging stations for electric vehicles
LED lighting
Telecom
Servers
Solar inverters
optimized capacitance profile for light
load conditions
Extremely high dv/dt
Optimized body diode recovery phase
Optimized softness
KEY BENEFITS
Extremely high efficiency performance
and increased power density
More robust power conversion in ZVS,
full and half bridge topologies
Higher operation frequencies and better
thermal management
Reduced EMI
www.st.com

STWA70N60DM6 Related Products

STWA70N60DM6 STW75N60DM6 STWA75N60DM6 STW70N60DM6 STWA65N60DM6 STW65N60DM6
Description MOSFET N-channel 600 V, 0.037 Ohm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 long leads package MOSFET N-channel 600 V, 0.032 Ohm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package MOSFET N-channel 600 V, 0.032 Ohm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package MOSFET N-channel 600 V, 0.037Ohm typ., 62A MDmesh DM6 Power MOSFET in a TO-247 package MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 long leads package MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package
Maker STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET
technology Si Si Si Si Si Si
Installation style Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package/box TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Number of channels 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel
Transistor polarity N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Vds - drain-source breakdown voltage 600 V 600 V 600 V 600 V 600 V 600 V
Id-continuous drain current 62 A 72 A 72 A 62 A 38 A 38 A
Rds On - drain-source on-resistance 42 mOhms 36 mOhms 36 mOhms 42 mOhms 71 mOhms 71 mOhms
Qg-gate charge 106 nC 117 nC 117 nC 106 nC 61 nC 61 nC
Configuration Single Single Single Single Single Single
channel mode Enhancement Enhancement Enhancement Enhancement Enhancement Enhancement
Encapsulation Tube Tube Tube Tube Tube Tube
series DM6 DM6 DM6 DM6 DM6 DM6
Factory packaging quantity 600 600 600 600 600 600
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